Inventor
ADRIEN LAVOIE
Inventor
US
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01LSemiconductor devices20%
H01JElectric discharge tubes or discharge lamps14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
B23QDetails, components, or accessories for machine tools, e.g. arrangements for copying or controlling1%
H10BElectronic memory devices1%
H10DInorganic electric semiconductor devices1%
B05CApparatus for applying fluent materials to surfaces, in general1%
PatentTitleYear
12,598,930Conformal thermal CVD with controlled film properties and high deposition rate202612,531,220Automated feedforward and feedback sequence for patterning CD control202612,473,633Plasma enhanced atomic layer deposition of silicon-containing films202512,448,687Dynamic precursor dosing for atomic layer deposition202512,451,346Modulated atomic layer deposition202512,421,602Multi-station semiconductor processing with independently adjustable pedestals202512,412,742Impurity reduction in silicon-containing films202512,354,871Ultrathin atomic layer deposition film accuracy thickness control202512,308,264Rapid tuning of critical dimension non-uniformity by modulating temperature transients of multi-zone substrate supports202512,278,125Integrated dry processes for patterning radiation photoresist patterning202512,261,038Gapfill of variable aspect ratio features with a composite PEALD and PECVD method202512,209,312Temperature control of a multi-zone pedestal202512,186,851Use of vacuum during transfer of substrates202512,183,604Integrated dry processes for patterning radiation photoresist patterning202412,157,945Thermal atomic layer deposition of silicon-containing films202412,142,509Electrostatic chuck with seal surface202412,125,705Method for providing doped silicon using a diffusion barrier layer202412,110,586Pedestals for modulating film properties in atomic layer deposition (ALD) substrate processing chambers202412,077,859Variable cycle and time RF activation method for film thickness matching in a multi-station deposition system202412,071,689Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes202412,057,300Apparatus for cleaning plasma chambers202412,049,698Systems and methods for reducing effluent build-up in a pumping exhaust system202412,049,699Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etching202412,037,686Selective carbon deposition202412,040,181Modulated atomic layer deposition202412,020,923Low-k ALD gap-fill methods and material202411,970,772Dynamic precursor dosing for atomic layer deposition202411,959,175Fill on demand ampoule refill202411,913,113Method and apparatus for modulating film uniformity202411,670,503Method of atomic layer deposition202311,651,963Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film202311,646,198Ultrathin atomic layer deposition film accuracy thickness control202311,542,599Method and apparatus for providing station to station uniformity202311,479,856Multi-cycle ALD process for film uniformity and thickness profile modulation202211,443,975Planar substrate edge contact with open volume equalization pathways and side containment202211,434,567Substrate processing system with tandem source activation for CVD202211,373,862Surface modified depth controlled deposition for plasma based deposition202211,332,824Systems and methods for reducing effluent build-up in a pumping exhaust system202211,322,416Controller for controlling core critical dimension variation using flash trim sequence202211,293,098Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etching202211,255,017Systems and methods for flow monitoring in a precursor vapor supply system of a substrate processing system202211,209,729Vacuum-integrated hardmask processes and apparatus202111,180,850Dynamic precursor dosing for atomic layer deposition2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to LAM RES CORP (42)· patent assignee history
2021–2026Based in US· patent location history
2026Patents assigned to LAM RES CORPORATION (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LAM RES CORP | 42 | 2021–2026 |
| LAM RES CORPORATION | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 43 | 2021–2026 |