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Inventor

Chongying Xu

Inventor
New Milford, CT, US

Overview

108→
Patents
2000–2019
Patent span
Chemistry
Primary field (CPC C)

Patents· 108 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material23%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
C07CAcyclic or carbocyclic compounds6%
H10DInorganic electric semiconductor devices4%
H10NElectric solid-state devices not otherwise provided for3%
C30BSingle-crystal growth3%
Y10TTechnical subjects covered by former us classification3%
H01LSemiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,280,186Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials201910,043,658Precursors for silicon dioxide gap fill20189,783,558'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20179,534,285'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20179,537,095'Tellurium compounds useful for deposition of tellurium containing materials'20179,373,677'Doping of ZrO2 for DRAM applications'20169,337,054'Precursors for silicon dioxide gap fill'20169,269,582'Cluster ion implantation of arsenic and phosphorus'20169,219,232'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20159,102,693'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20159,034,688'Antimony compounds useful for deposition of antimony-containing materials'20158,877,549'Low temperature deposition of phase change memory materials'20148,821,640'Solid precursor-based delivery of fluid utilizing controlled solids morphology'20148,802,882'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20148,796,068'Tellurium compounds useful for deposition of tellurium containing materials'20148,784,936'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20148,709,863'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20148,679,894'Low temperature deposition of phase change memory materials'20148,674,127'Antimony compounds useful for deposition of antimony-containing materials'20148,663,735'In situ generation of RuO4 for ALD of Ru and Ru related materials'20148,574,675'Method and composition for depositing ruthenium with assistive metal species'20138,541,318'Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same'20138,524,931'Precursor compositions for ALD/CVD of group II ruthenate thin films'20138,455,049'Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition'20138,288,198'Low temperature deposition of phase change memory materials'20128,268,665'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20128,242,032'Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same'20128,241,704'Chemical vapor deposition of high conductivity, adherent thin films of ruthenium'20128,236,097'Composition and method for low temperature deposition of silicon-containing films'20128,206,784'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20128,168,811'Precursors for CVD/ALD of metal-containing films'20128,153,833'Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride'20128,093,140'Amorphous Ge/Te deposition process'20128,053,375'Super-dry reagent compositions for formation of ultra low k films'20118,034,407'Chemical vapor deposition of high conductivity, adherent thin films of ruthenium'20118,008,117'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20117,964,746'Copper precursors for CVD/ALD/digital CVD of copper metal films'20117,910,765'Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride'20117,887,883'Composition and method for low temperature deposition of silicon-containing films'20117,863,203'Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same'20117,858,816'Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films'20107,838,073'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20107,838,329'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20107,786,320'Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride'20107,781,605'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20107,750,173'Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films'20107,713,346'Composition and method for low temperature deposition of silicon-containing films'20107,709,384'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20107,638,074'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20097,605,093'Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor'20097,601,860'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20097,579,496'Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same'20097,531,679'Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride'20097,531,031'Copper (I) compounds useful as deposition precursors of copper thin films'20097,517,809'Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations'20097,485,611'Supercritical fluid-based cleaning compositions and methods'20097,456,488'Porogen material'20087,446,217'Composition and method for low temperature deposition of silicon-containing films'20087,439,318'Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films'20087,437,060'Delivery systems for efficient vaporization of precursor source material'20087,423,166'Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films'20087,371,878'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20087,371,880'Copper (I) compounds useful as deposition precursors of copper thin films'20087,342,295'Porogen material'20087,326,673'Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates'20087,294,528'Supercritical fluid-assisted deposition of materials on semiconductor substrates'20077,285,308'Chemical vapor deposition of high conductivity, adherent thin films of ruthenium'20077,241,912'Copper (I) compounds useful as deposition precursors of copper thin films'20077,226,640'Method of fabricating iridium-based materials and structures on substrates'20077,223,352'Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal'20077,208,427'Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing'20077,198,815'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20077,189,571'Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films'20077,166,732'Copper (I) compounds useful as deposition precursors of copper thin films'20077,160,815'Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations'20077,119,052'Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers'20067,119,418'Supercritical fluid-assisted deposition of materials on semiconductor substrates'20067,108,771'Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films'20067,094,284'Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same'20067,084,080'Silicon source reagent compositions, and method of making and using same for microelectronic device structure'20067,030,168'Supercritical fluid-assisted deposition of materials on semiconductor substrates'20067,022,864'Ethyleneoxide-silane and bridged silane precursors for forming low k films'20067,011,716'Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products'20067,005,392'Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same'20066,989,358'Supercritical carbon dioxide/chemical formulation for removal of photoresists'20066,960,675'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20056,943,139'Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations'20056,909,839'Delivery systems for efficient vaporization of precursor source material'20056,869,638'Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same'20056,822,107'Chemical vapor deposition precursors for deposition of copper'20046,767,830'Br2SbCH3 a solid source ion implant and CVD precursor'20046,740,586'Vapor delivery system for solid precursors and method of using same'20046,735,978'Treatment of supercritical fluid utilized in semiconductor manufacturing applications'20046,736,993'Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same'20046,639,080'Pyrazolate copper complexes, and MOCVD of copper using same'20036,623,656'Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same'20036,602,549'Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures'20036,589,329'Composition and process for production of copper circuitry in microelectronic device structures'20036,559,328'Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures'20036,458,984'Chemical method for removal and analysis of boron impurities in tetraethylorthosilicate (TEOS)'20026,440,202'Pyrazolate copper complexes, and MOCVD of copper using same'20026,417,369'Pyrazolate copper complexes, and MOCVD of copper using same'20026,340,769'Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor'20026,337,148'Copper source reagent compositions, and method of making and using same for microelectronic device structures'20026,331,211'Method and apparatus for forming low dielectric constant polymeric films'20016,204,402'Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures'20016,123,993'Method and apparatus for forming low dielectric constant polymeric films'20006,102,993'Copper precursor composition and process for manufacture of microelectronic device structures'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2015Patents assigned to ADVANCED TECH MATERIALS (96)· patent assignee history
2000–2017Based in New Milford, CT, US· patent location history
2012–2016Patents assigned to XU CHONGYING (22)· patent assignee history
2012–2016Patents assigned to ROEDER JEFFREY F (12)· patent assignee history
2012–2014Patents assigned to BAUM THOMAS H (11)· patent assignee history
2012–2014Patents assigned to CHEN TIANNIU (10)· patent assignee history
2015–2019Based in Suzhou, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ADVANCED TECH MATERIALS962000–2015
XU CHONGYINGself222012–2016
ROEDER JEFFREY F122012–2016
BAUM THOMAS H112012–2014
CHEN TIANNIU102012–2014
Locations
LocationPatentsSpan
New Milford, CT, US1042000–2017
Suzhou, CN42015–2019