Inventor
Sun-Hak Lee
Inventor
Anyang-si, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H01LSemiconductor devices11%
A61KPreparations for medical, dental or toiletry purposes8%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations8%
C12NMicroorganisms or enzymes8%
C12QMeasuring or testing processes involving enzymes, nucleic acids or microorganisms8%
G01NInvestigating or analysing materials by determining their chemical or physical properties8%
C07HSugars3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
Y02PClimate change mitigation technologies in the production or processing of goods3%
PatentTitleYear
10,366,981Power semiconductor devices201910,312,322Power semiconductor device20199,947,742Power semiconductor device20189,257,502'Level shift power semiconductor device'20169,018,186'Method of treating hyperproliferation of cells using a nucleolin specific aptamer'20159,018,185'Method of diagnosing cancer using a nucleolin specific aptamer'20158,569,252'Nucleolin specific aptamer and use thereof'20138,476,700'Semiconductor device and method of fabricating the same'20138,124,756'Method of preparing 5′-amino-linker oligonucleotides derivatives and analogous 5′-labeled-linker oligonucleotides therefrom'20127,618,854'High frequency MOS transistor, method of forming the same, and method of manufacturing a semiconductor device including the same'20097,446,000'Method of fabricating semiconductor device having gate dielectrics with different thicknesses'20087,381,621'Methods of fabricating high voltage MOSFET having doped buried layer'20087,176,538'High voltage MOSFET having doped buried layer'20076,867,476'Vertical double diffused MOSFET and method of fabricating the same'20056,853,040'MOS transistor and fabrication method thereof'20056,507,080'MOS transistor and fabrication method thereof'20036,194,760'Double-diffused MOS transistor and method of fabricating the same'20015,913,114'Method of manufacturing a semiconductor device'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2013Patents assigned to SAMSUNG ELECTRONICS CO LTD (8)· patent assignee history
2003–2016Patents assigned to FAIRCHILD KR SEMICONDUCTOR LTD (3)· patent assignee history
2003–2005Based in Kyungki-do, KR· patent location history
2005–2008Based in Gyeonggi-do, KR· patent location history
2008–2009Based in Yongin-si, KR· patent location history
2012–2015Patents assigned to POSTECH ACAD IND FOUND (4)· patent assignee history
2012–2013Patents assigned to LEE SUN-HAK (3)· patent assignee history
2013–2019Based in Anyang-si, KR· patent location history
2013–2015Based in Pohang-si, KR· patent location history
2018–2019Patents assigned to FAIRCHILD KOREA SEMICONDUCTOR LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 8 | 1999–2013 |
| POSTECH ACAD IND FOUND | 4 | 2012–2015 |
| FAIRCHILD KR SEMICONDUCTOR LTD | 3 | 2003–2016 |
| LEE SUN-HAKself | 3 | 2012–2013 |
| FAIRCHILD KOREA SEMICONDUCTOR LTD | 2 | 2018–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Anyang-si, KR | 5 | 2013–2019 |
| Pohang-si, KR | 3 | 2013–2015 |
| Gyeonggi-do, KR | 3 | 2005–2008 |
| Yongin-si, KR | 2 | 2008–2009 |
| Kyungki-do, KR | 2 | 2003–2005 |