Inventor
Wen-Shiung Lour
Inventor
Chi-Lung, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices100%
PatentTitleYear
6,184,546'High barrier gate and tri-step doped channel field-effect transistor'20015,977,572'Low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistor'19995,789,771'Camel-gate field-effect transistor with multiple modulation-doped channels'19985,698,862'Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997Patents assigned to NAT SCIENCE COUNSEL OF REPUBLI (1)· patent assignee history
1997–1999Based in Chi-Lung, TW· patent location history
1998Patents assigned to NAT SCIENCE COUNCIL REPUBLIC CHINA (1)· patent assignee history
1999–2001Patents assigned to NAT SCIENCE COUNCIL (2)· patent assignee history
2001Based in Keelung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NAT SCIENCE COUNCIL | 2 | 1999–2001 |
| NAT SCIENCE COUNCIL REPUBLIC CHINA | 1 | 1998 |
| NAT SCIENCE COUNSEL OF REPUBLI | 1 | 1997 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chi-Lung, TW | 3 | 1997–1999 |
| Keelung, TW | 1 | 2001 |