Inventor
Naruhisa Miura
Inventor
Tokyo, JP
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices44%
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
C30BSingle-crystal growth1%
PatentTitleYear
10,886,372Silicon carbide semiconductor device202110,510,843Insulated gate silicon carbide semiconductor device and method for manufacturing same201910,418,444Silicon carbide semiconductor device201910,347,724Silicon carbide semiconductor device201910,157,986Silicon carbide semiconductor device and method for manufacturing same201810,062,758Semiconductor device201810,002,931Silicon carbide semiconductor device20189,972,676Silicon carbide semiconductor device20189,954,072Silicon-carbide semiconductor device and manufacturing method thereof20189,825,126'Semiconductor device'20179,741,797'Insulated gate silicon carbide semiconductor device and method for manufacturing same'20179,716,006'Semiconductor device manufacturing method and semiconductor device'20179,704,947'Semiconductor device and method for manufacturing same'20179,640,610'Semiconductor device and method of manufacturing semiconductor device'20179,577,086'Semiconductor device'20179,525,057'Semiconductor device'20169,502,553'Semiconductor device and method for manufacturing the same'20169,362,391'Silicon carbide semiconductor device and method of manufacturing the same'20169,324,782'Semiconductor device'20169,293,572'Power semiconductor device'20169,214,458'Semiconductor device'20159,190,468'Semiconductor device'20159,111,751'Silicon carbide semiconductor device and method of fabricating same'20159,105,715'Semiconductor device and method for manufacturing the same'20159,093,361'Semiconductor device'20159,076,761'Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device'20159,006,819'Power semiconductor device and method for manufacturing same'20158,969,960'Power semiconductor device'20158,860,039'Semiconductor device'20148,723,259'Silicon carbide semiconductor device'20148,716,717'Semiconductor device and method for manufacturing the same'20148,680,538'Silicon carbide semiconductor device'20148,629,498'Power semiconductor device and method for manufacturing the power semiconductor device'20148,513,735'Power semiconductor device'20138,492,836'Power semiconductor device'20138,367,536'Method for manufacturing silicon carbide semiconductor device'20138,252,672'Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same'20128,222,649'Semiconductor device and method of manufacturing the same'20128,093,598'Power semiconductor device'20127,928,469'MOSFET and method for manufacturing MOSFET'20116,635,938'Semiconductor device and manufacturing method thereof'20036,633,070'Semiconductor device'20036,624,034'Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction'20036,617,654'Semiconductor device with sidewall spacers and elevated source/drain region'20036,566,734'Semiconductor device'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to MITSUBISHI ELECTRIC CORP (45)· patent assignee history
2003–2021Based in Tokyo, JP· patent location history
2003Based in Hyogo, JP· patent location history
2012–2016Patents assigned to MIURA NARUHISA (22)· patent assignee history
2012–2016Patents assigned to IMAIZUMI MASAYUKI (12)· patent assignee history
2012Based in Chiyoda-ku, JP· patent location history
2013–2016Patents assigned to FURUKAWA AKIHIKO (9)· patent assignee history
2013–2016Patents assigned to HINO SHIRO (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 45 | 2003–2021 |
| MIURA NARUHISAself | 22 | 2012–2016 |
| IMAIZUMI MASAYUKI | 12 | 2012–2016 |
| FURUKAWA AKIHIKO | 9 | 2013–2016 |
| HINO SHIRO | 9 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 43 | 2003–2021 |
| Chiyoda-ku, JP | 1 | 2012 |
| Hyogo, JP | 1 | 2003 |