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Inventor

SANGSHIN HAN

Inventor
KR

Overview

4→
Patents
2024–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices27%
H10DInorganic electric semiconductor devices20%
B82YSpecific uses or applications of nanostructures13%
G11CStatic stores13%
H01LSemiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
PatentTitleYear
12,593,472Integrated circuit including gate-all-around transistor202612,165,701Semiconductor device including standard cells202412,046,653Integrated circuit including gate-all-around transistor202411,889,673Dual port SRAM cell and design method thereof2024

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2024–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
2024–2026Based in KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD42024–2026
Locations
LocationPatentsSpan
KR42024–2026