Inventor
Xiaolin Chen
Inventor
San Jose, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
C23CCoating metallic material20%
H04BTransmission10%
G01MTesting static or dynamic balance of machines or structures4%
G02BOptical elements, systems or apparatus4%
G06FElectric digital data processing4%
H01LSemiconductor devices4%
H04JMultiplex communication4%
H04LTransmission of digital information, e.g. telegraphic communication4%
H04QSelecting4%
PatentTitleYear
10,613,695Integrated touch sensing and force sensing in a touch detection device202010,433,669Bean grinder and automatic coffee pot equipped with the same201910,007,063Wavelength division multiplexer array20189,575,255'Wavelength division multiplexer array'20179,404,178'Surface treatment and deposition for reduced outgassing'20168,889,566'Low cost flowable dielectric films'20148,792,155'Athermal DQPSK and/or DPSK demodulator'20148,786,938'DP-QPSK demodulator'20148,629,067'Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio'20148,563,445'Conformal layers by radical-component CVD'20138,450,191'Polysilicon films by HDP-CVD'20138,433,204'DQPSK demodulator'20137,902,080'Deposition-plasma cure cycle process to enhance film quality of silicon dioxide'20117,799,698'Deposition-selective etch-deposition process for dielectric film gapfill'20107,745,351'Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 '20107,691,753'Deposition-selective etch-deposition process for dielectric film gapfill'20107,465,680'Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2'20087,109,114'HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance'20067,081,414'Deposition-selective etch-deposition process for dielectric film gapfill'20066,908,862'HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features'20055,822,219'System for identifying materials by NIR spectrometry'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2016Patents assigned to APPLIED MATERIALS INC (13)· patent assignee history
2005–2011Based in San Jose, CA, US· patent location history
2013–2016Patents assigned to CHEN XIAOLIN (5)· patent assignee history
2013–2018Patents assigned to FINISAR CORP (5)· patent assignee history
2013–2016Patents assigned to INGLE NITIN K (3)· patent assignee history
2013–2016Patents assigned to LIANG JINGMEI (3)· patent assignee history
2013–2020Based in Shanghai, CN· patent location history
2013–2016Based in San Ramon, CA, US· patent location history
2014Based in Shangai, CN· patent location history
2019Based in Zhuhai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 13 | 2005–2016 |
| CHEN XIAOLINself | 5 | 2013–2016 |
| FINISAR CORP | 5 | 2013–2018 |
| INGLE NITIN K | 3 | 2013–2016 |
| LIANG JINGMEI | 3 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 8 | 2005–2011 |
| Shanghai, CN | 5 | 2013–2020 |
| San Ramon, California, US | 5 | 2013–2016 |
| Zhuhai, CN | 1 | 2019 |
| Shangai, CN | 1 | 2014 |