Inventor
YUSHI HU
Inventor
CN
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices30%
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
PatentTitleYear
12,575,105Multiple-stack three-dimensional memory device and fabrication method thereof202612,490,440Three-dimensional memory devices and fabricating methods thereof202512,446,2173D NAND memory device and method of forming the same202512,279,420Memory having a continuous channel202512,261,112Signal lines in memory devices and methods for forming the same202512,185,537Integrated structures202412,063,780Memory cell structure of a three-dimensional memory device202411,991,880Three-dimensional memory devices and fabricating methods thereof202411,968,832Multiple-stack three-dimensional memory device and fabrication method thereof202411,943,928Method for forming channel hole plug of three-dimensional memory device202411,889,686Vertical memory devices202411,839,087Ferroelectric memory devices with reduced edge defects and methods for forming the same202311,805,646Three-dimensional memory devices and methods for forming the same202311,805,643Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector202311,737,2633D NAND memory device and method of forming the same202311,699,657Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer202311,690,219Three-dimensional memory devices having through array contacts and methods for forming the same202311,658,033Methods of forming assemblies having heavily doped regions202311,653,494Memory cell pillar including source junction plug202311,581,322Three-dimensional memory devices having through array contacts and methods for forming the same202311,532,636Three-dimensional memory devices having through array contacts and methods for forming the same202211,502,094Multi-level vertical memory device including inter-level channel connector202211,462,474Three-dimensional memory devices having a plurality of NAND strings202211,380,701Memory device and forming method thereof202211,329,061Method for improving channel hole uniformity of a three-dimensional memory device202211,315,941Memory having a continuous channel202211,309,327Method for forming channel hole plug of three-dimensional memory device202211,289,511Ferroelectric memory devices with reduced edge leakage and methods for forming the same202211,271,004Memory device and forming method thereof202211,264,397Source structure of three-dimensional memory device and method for forming the same202211,211,393Memory device and forming method thereof202111,211,397Three-dimensional memory devices and methods for forming the same202111,201,164Memory devices202111,145,6673D NAND memory device and method of forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (25)· patent assignee history
2021–2025Patents assigned to MICRON TECHNOLOGY INC (6)· patent assignee history
2021–2026Based in CN· patent location history
2021–2025Based in US· patent location history
2022–2023Patents assigned to WUXI PETABYTE TECH CO LTD (2)· patent assignee history
2023–2025Patents assigned to WUXI SMART MEMORIES TECH CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 25 | 2021–2026 |
| MICRON TECHNOLOGY INC | 6 | 2021–2025 |
| WUXI PETABYTE TECH CO LTD | 2 | 2022–2023 |
| WUXI SMART MEMORIES TECH CO LTD | 2 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 26 | 2021–2026 |
| US | 8 | 2021–2025 |