LexDanaLexDanabeta
Inventor

Chan-Long Shieh

Inventor
Paradise Valley, AZ, US

Overview

120→
Patents
1987–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 120 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices15%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light13%
H01LSemiconductor devices10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
H10KOrganic electric solid-state devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B82YSpecific uses or applications of nanostructures4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
PatentTitleYear
10,622,241LED die dispersal in displays and light panels with preserving neighboring relationship202010,109,647MOTFT with un-patterned etch-stop20189,947,704Method of recovery of MOTFT backplane after a-Si photodiode fabrication20189,911,857'Thin film transistor with low trap-density material abutting a metal oxide active layer and the gate dielectric'20189,863,910'TFT-based sensor with multiple sensing modalities'20189,773,824'Active matrix light emitting diode array and projector display comprising it'20179,773,918'Metal oxide TFT with improved stability and mobility'20179,768,322'Metal oxide TFT with improved source/drain contacts and reliability'20179,755,004'Full-color active matrix organic light emitting display with hybrid structure'20179,741,901'Two-terminal electronic devices and their methods of fabrication'20179,614,102'Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption'20179,608,017'Reversed flexible TFT back-panel by glass substrate removal'20179,520,437'Flexible APS X-ray imager with MOTFT pixel readout and a pin diode sensing element'20169,412,623'Metal oxide TFT with improved source/drain contacts and reliability'20169,401,431'Double self-aligned metal oxide TFT'20169,397,282'Active matrix light emitting diode array and projector display comprising it'20169,379,247'High mobility stabile metal oxide TFT'20169,362,413'MOTFT with un-patterned etch-stop'20169,356,156'Stable high mobility MOTFT and fabrication at low temperature'20169,331,230'LED die dispersal in displays and light panels with preserving neighboring relationship'20169,318,614'Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption'20169,306,078'Stable amorphous metal oxide semiconductor'20169,257,490'Full-color active matrix organic light emitting display with hybrid'20169,240,437'Flexible TFT backpanel by glass substrate removal'20169,129,868'Mask level reduction for MOFET'20159,117,918'Metal oxide TFT with improved source/drain contacts'20159,099,563'Stable amorphous metal oxide semiconductor'20159,070,779'Metal oxide TFT with improved temperature stability'20158,962,377'Pixelated imager with motfet and process'20158,936,973'Anodization of gate with laser vias and cuts'20158,907,336'Stable amorphous metal oxide semiconductor'20148,742,658'Full-color active matrix organic light emitting display with hybrid'20148,679,905'Metal oxide TFT with improved source/drain contacts'20148,592,817'Self-aligned metal oxide TFT with reduced number of masks'20138,435,832'Double self-aligned metal oxide TFT'20138,377,743'Laser annealing of metal oxide semiconductor on temperature sensitive substrate formations'20138,273,600'Self-aligned metal oxide TFT with reduced number of masks'20128,222,077'Metal-insulator-metal (MIM) devices and their methods of fabrication'20128,193,594'Two-terminal switching devices and their methods of fabrication'20128,187,929'Mask level reduction for MOSFET'20128,129,720'Double self-aligned metal oxide TFT'20127,977,868'Active matrix organic light emitting device with MO TFT backplane'20117,977,151'Double self-aligned metal oxide TFT'20117,898,042'Two-terminal switching devices and their methods of fabrication'20117,812,346'Metal oxide TFT with improved carrier mobility'20107,772,589'High performance flexible substrate thin film transistor and method'20107,605,026'Self-aligned transparent metal oxide TFT on flexible substrate'20097,013,088'Method and apparatus for parallel optical interconnection of fiber optic transmitters, receivers and transceivers'20066,960,467'Biochannel assay for hybridization with biomaterial'20056,940,885'Systems, methods, and apparatuses for optically pumped vertical cavity surface emitting laser devices'20056,936,486'Low voltage multi-junction vertical cavity surface emitting laser'20056,906,353'High speed implanted VCSEL'20056,852,557'Method of fabricating long-wavelength VCSEL and apparatus'20056,696,308'Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication'20046,642,070'Electrically pumped long-wavelength VCSEL and methods of fabrication'20036,628,685'Method of fabricating long-wavelength VCSEL and apparatus'20036,594,294'Segmented-mirror VCSEL'20036,556,610'Semiconductor lasers'20036,542,530'Electrically pumped long-wavelength VCSEL and methods of fabrication'20036,489,175'Electrically pumped long-wavelength VCSEL and methods of fabrication'20026,361,958'Biochannel assay for hybridization with biomaterial'20026,326,640'Organic thin film transistor with enhanced carrier mobility'20016,203,981'Transistor-based molecular detection apparatus and method'20016,156,582'Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector'20006,103,467'Method and system for synthesizing oligonucleotides using nucleotide-specific dispensing bars'20006,097,748'Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication'20006,090,635'Method for forming a semiconductor device structure having a laser portion'20006,057,167'Magnetoresistance-based method and apparatus for molecular detection'20006,030,781'Electric field amplified oligonucleotide ligase analysis'20005,985,568'Method of photoelectro-manipulation of target molecules and apparatus therefor'19995,945,832'Structure and method of measuring electrical characteristics of a molecule'19995,945,286'Electrochemical-based molecular detection apparatus and method'19995,940,683'LED display packaging with substrate removal and method of fabrication'19995,853,905'Efficient single layer electroluminescent device'19985,841,914'Molecular detection apparatus and method using optical waveguide detection'19985,827,482'Transistor-based apparatus and method for molecular detection and field enhancement'19985,827,753'Monolithic integration of driver circuits with LED array and methods of manufacture'19985,810,989'Photoelectric synthesis of DNA or protein probe arrays'19985,798,535'Monolithic integration of complementary transistors and an LED array'19985,789,766'Led array with stacked driver circuits and methods of manfacture'19985,780,321'LED display packaging with substrate removal and method of fabrication'19985,757,836'Vertical cavity surface emitting laser with laterally integrated photodetector'19985,751,757'VCSEL with integrated MSM photodetector'19985,748,160'Active driven LED matrices'19985,742,630'VCSEL with integrated pin diode'19985,733,509'Method and system for synthesizing oligonucleotides using nucleotide-specific dispensing bars'19985,719,033'Thin film transistor bio/chemical sensor'19985,710,441'Microcavity LED with photon recycling'19985,671,303'Molecular detection apparatus and method using optical waveguide detection'19975,654,228'VCSEL having a self-aligned heat sink and method of making'19975,641,611'Method of fabricating organic LED matrices'19975,621,225'Light emitting diode display package'19975,612,228'Method of making CMOS with organic and inorganic semiconducting region'19975,574,744'Optical coupler'19965,547,898'Method for p-doping of a light-emitting device'19965,538,919'Method of fabricating a semiconductor device with high heat conductivity'19965,530,715'Vertical cavity surface emitting laser having continuous grading'19965,489,988'Environmental sensor and method therefor'19965,482,891'VCSEL with an intergrated heat sink and method of making'19965,478,774'Method of fabricating patterned-mirror VCSELs using selective growth'19955,468,656'Method of making a VCSEL'19955,446,752'VCSEL with current blocking layer offset'19955,422,901'Semiconductor device with high heat conductivity'19955,403,774'Method for fabricating index-guided semiconductor laser'19955,388,120'VCSEL with unstable resonator'19955,369,656'Inverted drive design for VCSEL-based optical interconnects'19945,359,618'High efficiency VCSEL and method of fabrication'19945,358,880'Method of manufacturing closed cavity LED'19945,355,386'Monolithically integrated semiconductor structure and method of fabricating such structure'19945,351,257'VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication'19945,331,658'Vertical cavity surface emitting laser and sensor'19945,317,587'VCSEL with separate control of current distribution and optical mode'19945,293,392'Top emitting VCSEL with etch stop layer'19945,274,655'Temperature insensitive vertical cavity surface emitting laser'19935,270,245'Method of forming a light emitting diode'19935,258,316'Patterened mirror vertical cavity surface emitting laser'19935,256,596'Top emitting VCSEL with implant'19934,990,466'Method for fabricating index-guided semiconductor laser'19914,745,085'Method of making I.sup.2 L heterostructure bipolar transistors'19884,644,381'I.sup.2 L heterostructure bipolar transistors and method of making the same'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1995Based in Plainsboro, NJ, US· patent location history
1993–2002Patents assigned to MOTOROLA INC (52)· patent assignee history
1993–2020Based in Paradise Valley, AZ, US· patent location history
2009–2018Patents assigned to CBRITE INC (44)· patent assignee history
2012–2020Patents assigned to YU GANG (37)· patent assignee history
2012–2018Patents assigned to SHIEH CHAN-LONG (35)· patent assignee history
2012–2018Patents assigned to FOONG FATT (20)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MOTOROLA INC521993–2002
CBRITE INC442009–2018
YU GANG372012–2020
SHIEH CHAN-LONGself352012–2018
FOONG FATT202012–2018
Locations
LocationPatentsSpan
Paradise Valley, AZ, US1161993–2020
Plainsboro, New Jersey, US41987–1995