Inventor

Hung-Wei Chen

Inventor

Hsinchu, TW

Overview

2000–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 69 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices24%

H01LSemiconductor devices5%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

B01LChemical or physical laboratory apparatus for general use4%

G01NInvestigating or analysing materials by determining their chemical or physical properties4%

G01RMeasuring electric variables4%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

A61BDiagnosis3%

G06FElectric digital data processing2%

H01HElectric switches2%

PatentTitleYear

11,059,020Electronic waste processing method and apparatus thereof2021 10,826,449Bias switch circuit for compensating frontend offset of high accuracy measurement circuit2020 10,818,653Control circuit and operating circuit utilizing the same2020 10,784,252Electrostatic discharge protection circuit2020 10,715,172Analog-to-digital converter with adjustable operation frequency for noise reduction2020 D0887768Food cooking equipment2020 10,589,271Blood plasma and blood cell separation device and separating method thereof2020 10,523,002Electrostatic discharge protection circuit2019 10,456,781Fluid inspection device2019 10,256,201Bonding pad structure having island portions and method for manufacturing the same2019 10,216,235Data storage mounting apparatus2019 10,164,627Power-on control circuit2018 10,101,760Power-on control circuit and input/output control circuit2018 10,067,042Liquid analyzing device2018 10,056,897Power-on control circuit with state-recovery mechanism and operating circuit utilizing the same2018 10,048,246Biological detecting cartridge and flowing method of detected fluid thereof2018 9,983,639Data storage mounting apparatus2018 9,929,114'Bonding pad structure having island portions and method for manufacturing the same'2018 9,864,130'Power supply system'2018 9,847,103Data storage device carrier and data storage system using the same2017 9,829,439Test strip device2017 9,673,105'CMOS devices with Schottky source and drain regions'2017 9,622,696'Test device and rotation module thereof'2017 9,584,023'Voltage converter'2017 9,525,431'Feed forward sigma-delta ADC modulator'2016 9,463,463'Glucose test device'2016 RE045944'Structure for a multiple-gate FET device and a method for its fabrication'2016 9,204,832'Test device and rotation module thereof'2015 9,207,330'Positioning device and positioning method thereof'2015 9,069,027'Cell voltage monitoring and self-calibrating device'2015 RE045180'Structure for a multiple-gate FET device and a method for its fabrication'2014 RE045165'Structure for a multiple-gate FET device and a method for its fabrication'2014 8,742,971'Successive approximation analog-to-digital converter'2014 8,569,837'MOS devices having elevated source/drain regions'2013 8,476,156'Manufacturing method of flash memory structure with stress area'2013 8,466,505'Multi-level flash memory cell capable of fast programming'2013 8,426,298'CMOS devices with Schottky source and drain regions'2013 8,148,996'Circuit testing apparatus'2012 8,134,636'Autofocusing optical system using tunable lens system'2012 8,058,581'Rotary control switch mounted on control panel of electrical appliance'2011 8,039,284'Dual metal silicides for lowering contact resistance'2011 8,008,692'Semiconductor memory structure with stress regions'2011 7,883,979'Method for manufacturing a semiconductor device with reduced floating body effect'2011 7,830,163'Testing circuit board for testing devices under test'2010 7,803,718'BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture'2010 7,737,532'Hybrid Schottky source-drain CMOS for high mobility and low barrier'2010 7,705,670'Wide-range and high-resolution programmable gain amplifier'2010 7,663,185'FIN-FET device structure formed employing bulk semiconductor substrate'2010 7,642,801'Circuit testing apparatus for testing a device under test'2010 7,611,938'Semiconductor device having high drive current and method of manufacture therefor'2009 7,569,896'Transistors with stressed channels'2009 7,538,351'Method for forming an SOI structure with improved carrier mobility and ESD protection'2009 7,511,348'MOS transistors with selectively strained channels'2009 7,466,008'BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture'2008 7,452,778'Semiconductor nano-wire devices and methods of fabrication'2008 7,425,740'Method and structure for a 1T-RAM bit cell and macro'2008 7,381,649'Structure for a multiple-gate FET device and a method for its fabrication'2008 7,355,262'Diffusion topography engineering for high performance CMOS fabrication'2008 7,332,777'STI liner for SOI structure'2008 7,319,258'Semiconductor-on-insulator chip with<100>-oriented transistors'2008 7,208,815'CMOS logic gate fabricated on hybrid crystal orientations and method of forming thereof'2007 7,205,601'FinFET split gate EEPROM structure and method of its fabrication'2007 7,176,522'Semiconductor device having high drive current and method of manufacturing thereof'2007 7,105,897'Semiconductor structure and method for integrating SOI devices and bulk devices'2006 7,074,692'Method for reducing a short channel effect for NMOS devices in SOI circuits'2006 6,955,955'STI liner for SOI structure'2005 6,691,376'Firmly secured paper clip'2004 6,439,611'File folder, box and panel designed with pre-perforated holes, grooves and slots'2002 6,026,676'Method of determining a glide avalanche break point of a magnetic recording medium'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Based in Taipei, TW· patent location history

2005–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (28)· patent assignee history

2005–2017Based in Hsinchu, TW· patent location history

2011–2015Patents assigned to CHEN HUNG-WEI (10)· patent assignee history

2013–2020Based in Jhubei City, TW· patent location history

2015–2017Patents assigned to LITE ON TECHNOLOGY CORP (4)· patent assignee history

2015–2019Based in Taichung, TW· patent location history

2017–2019Based in New Taipei, TW· patent location history

2018–2020Patents assigned to VANGUARD INT SEMICONDUCT CORP (8)· patent assignee history

2018–2020Patents assigned to SKYLA CORP HSINCHU SCIENCE PARK BRANCH (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG	28	2005–2016
CHEN HUNG-WEIself	10	2011–2015
VANGUARD INT SEMICONDUCT CORP	8	2018–2020
LITE ON TECHNOLOGY CORP	4	2015–2017
SKYLA CORP HSINCHU SCIENCE PARK BRANCH	4	2018–2020

Locations

Location	Patents	Span
Hsinchu, TW	30	2005–2017
Taipei, TW	18	2002–2020
Jhubei City, TW	9	2013–2020
Taichung, TW	3	2015–2019
New Taipei, TW	3	2017–2019