Inventor
Shawn R. Gibb
Inventor
Huntersville, NC, US
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H03Hprimary
H03HImpedance networks, e.g. resonant circuits23%
H01LSemiconductor devices17%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
H10DInorganic electric semiconductor devices9%
H10NElectric solid-state devices not otherwise provided for7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C30BSingle-crystal growth6%
H04BTransmission6%
H03FAmplifiers5%
Y10TTechnical subjects covered by former us classification5%
PatentTitleYear
11,063,576Front end module for 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit202111,031,989Front end module for 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit202111,015,263Defect reduction in seeded aluminum nitride crystal growth202110,992,279Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications202110,985,7325.6 GHz Wi-Fi acoustic wave resonator RF filter circuit202110,979,0255G band n79 acoustic wave resonator RF filter circuit202110,979,011Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications202110,979,0235.9 GHz c-V2X and DSRC acoustic wave resonator RF filter circuit202110,979,0245.2 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit202110,979,0225.2 GHz Wi-Fi acoustic wave resonator RF filter circuit202110,957,688Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices202110,931,251Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications202110,855,250Communication filter for LTE band 41202010,727,811Effective coupling coefficients for strained single crystal epitaxial film bulk acoustic resonators202010,700,237Ultraviolet light-emitting devices incorporating graded layers and compositional offsets202010,673,513Front end module for 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit202010,615,773Wireless communication infrastructure system configured with a single crystal piezo resonator and filter structure202010,581,398Method of manufacture for single crystal acoustic resonator devices using micro-vias202010,523,180Method and structure for single crystal acoustic resonator devices using thermal recrystallization201910,446,391Thick pseudomorphic nitride epitaxial layers201910,431,580Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices201910,392,722Defect reduction in seeded aluminum nitride crystal growth201910,256,786Communication filter using single crystal acoustic resonator devices201910,211,369Ultraviolet light-emitting devices incorporating two-dimensional hole gases201910,211,368Ultraviolet light-emitting devices incorporating graded layers and compositional offsets201910,106,913System for growth of large aluminum nitride single crystals with thermal-gradient control201810,110,189Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications201810,110,188Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications201810,110,190Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications20189,806,227'Ultraviolet light-emitting devices incorporating graded layers and compositional offsets'20179,771,666'Defect reduction in seeded aluminum nitride crystal growth'20179,680,057'Ultraviolet light-emitting devices incorporating two-dimensional hole gases'20179,620,676'Pseudomorphic electronic and optoelectronic devices having planar contacts'20179,580,833'Growth of large aluminum nitride single crystals with thermal-gradient control'20179,299,880'Pseudomorphic electronic and optoelectronic devices having planar contacts'20169,028,612'Growth of large aluminum nitride single crystals with thermal-gradient control'20158,080,833'Thick pseudomorphic nitride epitaxial layers'20117,968,391'High voltage GaN-based transistor structure'20117,459,356'High voltage GaN-based transistor structure'20087,408,182'Surface passivation of GaN devices in epitaxial growth chamber'20087,190,005'GaN LED with solderable backside metal'20077,052,942'Surface passivation of GaN devices in epitaxial growth chamber'20067,033,961'Epitaxy/substrate release layer'20067,026,665'High voltage GaN-based transistor structure'20066,787,435'GaN LED with solderable backside metal'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2011Based in Charlotte, NC, US· patent location history
2011–2021Patents assigned to CRYSTAL IS INC (15)· patent assignee history
2011–2020Patents assigned to SCHOWALTER LEO J (12)· patent assignee history
2011–2020Patents assigned to GIBB SHAWN R (10)· patent assignee history
2011–2020Patents assigned to GRANDUSKY JAMES R (9)· patent assignee history
2011–2021Based in Clifton Park, NY, US· patent location history
2018–2021Patents assigned to AKOUSTIS INC (22)· patent assignee history
2018–2021Based in Huntersville, NC, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AKOUSTIS INC | 22 | 2018–2021 |
| CRYSTAL IS INC | 15 | 2011–2021 |
| SCHOWALTER LEO J | 12 | 2011–2020 |
| GIBB SHAWN Rself | 10 | 2011–2020 |
| GRANDUSKY JAMES R | 9 | 2011–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Huntersville, NC, US | 22 | 2018–2021 |
| Clifton Park, New York, US | 15 | 2011–2021 |
| Charlotte, NC, US | 8 | 2004–2011 |