Inventor
Jae-eon Park
Inventor
Gyeonggi-do, KR
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
C23CCoating metallic material7%
E02BHydraulic engineering7%
PatentTitleYear
7,838,390'Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein'20107,800,134'CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein'20107,541,288'Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques'20097,534,678'Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby'20097,323,419'Method of fabricating semiconductor device'20087,297,584'Methods of fabricating semiconductor devices having a dual stress liner'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2010Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2007–2009Patents assigned to CHARTERED SEMICONDUCTOR MFG (2)· patent assignee history
2007–2010Based in Gyeonggi-do, KR· patent location history
2008Based in Yongsin-si, KR· patent location history
2009Patents assigned to IBM (1)· patent assignee history
2009Patents assigned to INFINEON TECHNOLOGIES AG (1)· patent assignee history
2009Based in Fishkill, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 6 | 2007–2010 |
| CHARTERED SEMICONDUCTOR MFG | 2 | 2007–2009 |
| IBM | 1 | 2009 |
| INFINEON TECHNOLOGIES AG | 1 | 2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 4 | 2007–2010 |
| Fishkill, New York, US | 1 | 2009 |
| Yongsin-si, KR | 1 | 2008 |