Inventor

MING-HSI YEH

Inventor
TW

Overview

85→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 85 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices29%
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures3%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
C23FNon-mechanical removal of metallic material from surface1%
B08BCleaning in general1%
H10BElectronic memory devices1%
C23CCoating metallic material0%
PatentTitleYear
12,557,577Method of forming semiconductor device using wet etching chemistry202612,520,531Semiconductor device and manufacturing method thereof202612,495,603Semiconductor device and manufacturing method for the same202512,490,497Metal gate patterning202512,469,789Semiconductor structure202512,469,710Method of manufacturing a semiconductor device202512,439,643Fin shape modification202512,394,669Wet cleaning with tunable metal recess for via plugs202512,389,661Method for modifying metal-including material in semiconductor manufacturing process202512,381,092Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure202512,381,081Method of breaking through etch stop layer202512,376,372Fin field-effect transistor and method of forming the same202512,376,358Semiconductor devices and methods of manufacturing thereof202512,376,326Gate resistance improvement and method thereof202512,369,348Fin Field-Effect Transistor device and method of forming the same202512,362,189Semiconductor devices and methods of manufacturing thereof202512,363,966Semiconductor devices and method of forming the same202512,317,525Fin field-effect transistor device and method of forming the same202512,308,248Semiconductor device and method of manufacture202512,278,288Fin field-effect transistor device having hybrid work function layer stack202512,272,598Conductive feature of a semiconductor device202512,237,400Method of forming semiconductor device202512,224,204Semiconductor device and method202512,191,380Semiconductor device and method202512,183,637Fin field-effect transistor and method of forming the same202412,183,823Fin field-effect transistor with a gate structure having a dielectric protection layer202412,176,422Controlling fin-thinning through feedback202412,136,566Semiconductor device and method of manufacture202412,119,390Gate spacer structures and methods for forming the same202412,080,556Fin field-effect transistor and method of forming the same202412,074,035Method for partially removing tungsten in semiconductor manufacturing process202412,068,385Oxidation to mitigate dry etch and/or wet etch fluorine residue202412,051,753Fin field-effect transistor device having hybrid work function layer stack202412,051,619Semiconductor device and method of manufacture202412,051,626Fin Field-Effect transistor and method of forming the same202412,046,476Wet etching chemistry and method of forming semiconductor device using the same202412,021,145Fin field-effect transistor device having hybrid work function layer stack202412,015,077Metal gate using monolayers202411,996,470Fin field-effect transistor and method of forming the same202411,996,324Conductive feature of a semiconductor device and method of forming same202411,978,801Fin field-effect transistor device and method of forming the same202411,972,982Method of manufacturing a semiconductor device202411,923,437Controlling fin-thinning through feedback202411,923,428Fin field-effect transistor and method of forming the same202411,923,201Self-protective layer formed on high-K dielectric layer202411,901,441Fin field-effect transistor and method of forming the same202411,901,180Method of breaking through etch stop layer202411,854,816Semiconductor devices and methods of manufacturing thereof202311,854,903Footing removal in cut-metal process202311,854,870Etch method for interconnect structure202311,855,193Fin field-effect transistor device and method of forming the same202311,848,239Patterning method and structures resulting therefrom202311,823,945Method for cleaning semiconductor wafer202311,817,330Method for processing substrate202311,810,978Gate resistance improvement and method thereof202311,749,753Methods of forming a semiconductor device with a gate structure having a dielectric protection layer202311,735,426Semiconductor device and method of manufacture202311,735,425Fin field-effect transistor and method of forming the same202311,715,670FIN field-effect transistor and method of forming the same202311,682,669Metal gate structure and methods thereof202311,658,225Fin field-effect transistor and method of forming the same202311,594,455Semiconductor device and manufacturing method for the same202311,588,041Fin field-effect transistor and method of forming the same202311,587,875Connecting structure and method for forming the same202311,557,512Wet cleaning with tunable metal recess for via plugs202311,522,083Fin field-effect transistor device and method of forming the same202211,488,859Semiconductor device and method202211,488,857Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process202211,476,124Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure202211,437,493Gate spacer structures and methods for forming the same202211,424,347Semiconductor device and method202211,424,185Semiconductor device and manufacturing method thereof202211,404,322Method of manufacturing a semiconductor device202211,404,552Fin Field-Effect Transistor and method of forming the same202211,398,391Substrate processing apparatus and method for processing substrate202211,380,793Fin field-effect transistor device having hybrid work function layer stack202211,309,190Semiconductor device and method of manufacture202211,309,185Fin field-effect transistor and method of forming the same202211,276,571Method of breaking through etch stop layer202211,257,924Metal gate using monolayers202211,227,940Fin field-effect transistor device and method of forming the same202211,201,084Fin field-effect transistor device and method of forming the same202111,195,752Semiconductor device and method of forming same202111,189,714Gate stack structure and method for forming the same202111,158,726Controlling fin-thinning through feedback2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (85)· patent assignee history
2021–2025Patents assigned to TAIWAN SEMICONDUTOR MFG COMPANY LTD (2)· patent assignee history
2021–2026Based in TW· patent location history
2023Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD852021–2026
TAIWAN SEMICONDUTOR MFG COMPANY LTD22021–2025
TAIWAN SEMICONDUCTOR MFG12023
Locations
LocationPatentsSpan
TW852021–2026