Inventor
Beom Soo Park
Inventor
San Jose, CA, US
Overview
Patents· 54 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01JElectric discharge tubes or discharge lamps16%
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices8%
Y10TTechnical subjects covered by former us classification3%
B24CAbrasive or related blasting with particulate material2%
H10KOrganic electric solid-state devices2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
C25DProcesses for the electrolytic or electrophoretic production of coatings1%
PatentTitleYear
10,854,737Plasma treatment on metal-oxide TFT202010,697,063Corner spoiler for improving profile uniformity202010,676,817Flip edge shadow frame202010,434,629Roughened substrate support201910,312,058Plasma uniformity control by gas diffuser hole design201910,262,837Plasma uniformity control by gas diffuser hole design201910,123,379Substrate support with quadrants201810,002,711Low temperature multilayer dielectric film for passivation and capacitor20189,989,827Display device20189,887,277'Plasma treatment on metal-oxide TFT'20189,758,869'Anodized showerhead'20179,677,177'Substrate support with quadrants'20179,521,344'Image sensor and method of processing image data with multiple differential ramping up/down signals, and image processing device including the image sensor'20169,449,809'Interface adhesion improvement method'2016D0756502'Gas diffuser assembly'20169,287,137'Methods for depositing a silicon containing layer with argon gas dilution'20169,269,923'Barrier films for thin film encapsulation'20169,230,796'A-Si seasoning effect to improve SiN run-to-run uniformity'20169,200,368'Plasma uniformity control by gas diffuser hole design'20159,039,864'Off-center ground return for RF-powered showerhead'20158,999,847'a-Si seasoning effect to improve SiN run-to-run uniformity'20158,906,813'SiOx process chemistry development using microwave plasma CVD'20148,901,015'Method for depositing an inorganic encapsulating film'20148,883,269'Thin film deposition using microwave plasma'20148,875,657'Balancing RF bridge assembly'20148,853,098'Substrate support with gas introduction openings'20148,674,844'Detecting plasma chamber malfunction'20148,670,857'Flexible process condition monitoring'20148,430,961'Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber'20138,381,677'Prevention of film deposition on PECVD process chamber wall'20138,372,205'Reducing electrostatic charge by roughening the susceptor'20138,361,549'Power loading substrates to reduce particle contamination'20138,173,228'Particle reduction on surfaces of chemical vapor deposition processing apparatus'20128,174,400'Frequency monitoring to detect plasma process abnormality'20128,147,614'Multi-gas flow diffuser'20128,142,606'Apparatus for depositing a uniform silicon film and methods for manufacturing the same'20128,110,453'Low temperature thin film transistor process, device property, and device stability improvement'20128,083,853'Plasma uniformity control by gas diffuser hole design'20118,075,952'Power loading substrates to reduce particle contamination'20118,076,222'Microcrystalline silicon thin film transistor'20118,075,690'Diffuser gravity support'20118,074,599'Plasma uniformity control by gas diffuser curvature'20118,026,759'Multistage amplifying circuit'20117,902,991'Frequency monitoring to detect plasma process abnormality'20117,884,035'Method of controlling film uniformity and composition of a PECVD-deposited A-SiNx : H gate dielectric film deposited over a large substrate surface'20117,833,885'Microcrystalline silicon thin film transistor'20107,785,672'Method of controlling the film properties of PECVD-deposited thin films'20107,732,010'Method for supporting a glass substrate to improve uniform deposition thickness'20107,589,031'Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films'20097,534,301'RF grounding of cathode in process chamber'20097,429,410'Diffuser gravity support'20087,199,061'Pecvd silicon oxide thin film deposition'20077,125,758'Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors'20066,825,134'Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2020Patents assigned to APPLIED MATERIALS INC (51)· patent assignee history
2004–2020Based in San Jose, CA, US· patent location history
2011–2020Patents assigned to PARK BEOM SOO (28)· patent assignee history
2011–2020Patents assigned to CHOI SOO YOUNG (24)· patent assignee history
2011–2020Patents assigned to WHITE JOHN M (20)· patent assignee history
2011–2020Patents assigned to TINER ROBIN L (9)· patent assignee history
2011Based in Seoul, KR· patent location history
2016–2019Based in Cupertino, CA, US· patent location history
2016Based in Seongnam-si, KR· patent location history
2018Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 51 | 2004–2020 |
| PARK BEOM SOOself | 28 | 2011–2020 |
| CHOI SOO YOUNG | 24 | 2011–2020 |
| WHITE JOHN M | 20 | 2011–2020 |
| TINER ROBIN L | 9 | 2011–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 49 | 2004–2020 |
| Cupertino, California, US | 2 | 2016–2019 |
| Hwaseong-si, KR | 1 | 2018 |
| Seongnam-si, KR | 1 | 2016 |
| Seoul, KR | 1 | 2011 |