Inventor
Philip Allan Kraus
Inventor
San Jose, CA, US
Overview
Patents· 59 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H01JElectric discharge tubes or discharge lamps15%
H01LSemiconductor devices13%
C23CCoating metallic material11%
H10DInorganic electric semiconductor devices5%
H05HPlasma technique3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
B81BMicrostructural devices or systems, e.g. micromechanical devices2%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
PatentTitleYear
11,114,282Phased array modular high-frequency source202111,081,317Modular high-frequency source202111,069,504Creating ion energy distribution functions (IEDF)202111,049,694Modular microwave source with embedded ground surface202111,037,764Modular microwave source with local Lorentz force202110,985,009Methods to deposit flowable (gap-fill) carbon containing films using various plasma sources202110,957,565Processing tool having a monitoring device202110,943,768Modular high-frequency source with integrated gas distribution202110,937,678Substrate support with multiple embedded electrodes202110,923,320System for tunable workpiece biasing in a plasma reactor202110,904,996Substrate support with electrically floating power supply202110,903,056Plasma source for rotating susceptor202110,879,042Symmetric plasma source to generate pie shaped treatment202010,840,086Plasma enhanced CVD with periodic high voltage bias202010,830,756Method to create a free-standing membrane for biological applications202010,811,296Substrate support with dual embedded electrodes202010,790,175Selective etch rate monitor202010,763,150System for coupling a voltage to spatially segmented portions of the wafer with variable voltage202010,763,143Processing tool having a monitoring device202010,752,496Pore formation in a substrate202010,748,745Modular microwave plasma source202010,720,311Phased array modular high-frequency source202010,714,372System for coupling a voltage to portions of a substrate202010,707,058Symmetric and irregular shaped plasmas using modular microwave sources202010,685,807Creating ion energy distribution functions (IEDF)202010,607,817Thermal repeatability and in-situ showerhead temperature monitoring202010,597,785Single oxide metal deposition chamber202010,546,698Structure for electric energy storage using carbon nanotubes202010,510,575Substrate support with multiple embedded electrodes201910,504,699Phased array modular high-frequency source201910,373,804System for tunable workpiece biasing in a plasma reactor201910,312,048Creating ion energy distribution functions (IEDF)201910,121,655Lateral plasma/radical source20189,978,621Selective etch rate monitor20189,975,758Wafer processing equipment having exposable sensing layers20189,725,302'Wafer processing equipment having exposable sensing layers'20179,112,095'CIGS absorber formed by co-sputtered indium'20158,975,166'Method and apparatus for atomic hydrogen surface treatment during GaN epitaxy'20158,900,897'Material with tunable index of refraction'20148,835,961'Index-matched insulators'20148,778,811'Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation'20148,652,861'HPC optimization of contacts to optoelectronic devices'20148,524,581'GaN epitaxy with migration enhancement and surface energy modification'20138,377,803'Methods and systems for forming thin films'20138,323,754'Stabilization of high-k dielectric materials'20128,318,590'Methods and systems for forming thin films'20128,143,147'Methods and systems for forming thin films'20128,110,828'Real time process monitoring and control for semiconductor junctions'20127,964,418'Real time process monitoring and control for semiconductor junctions'20117,902,018'Fluorine plasma treatment of high-k gate stack for defect passivation'20117,888,217'Method for fabricating a gate dielectric of a field effect transistor'20117,863,193'Integrated circuit fabrication process using a compression cap layer in forming a silicide with minimal post-laser annealing dopant deactivation'20117,737,036'Integrated circuit fabrication process with minimal post-laser annealing dopant deactivation'20107,727,828'Method for fabricating a gate dielectric of a field effect transistor'20107,659,187'Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface'20107,514,373'Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy'20097,179,754'Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy'20076,831,021'Plasma method and apparatus for processing a substrate'20046,660,659'Plasma method and apparatus for processing a substrate'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to APPLIED MATERIALS INC (46)· patent assignee history
2003–2021Based in San Jose, CA, US· patent location history
2012–2015Patents assigned to INTERMOLECULAR INC (10)· patent assignee history
2012–2015Patents assigned to KRAUS PHILIP A (7)· patent assignee history
2012–2015Patents assigned to CHUA THAI CHENG (5)· patent assignee history
2012–2013Patents assigned to NIJHAWAN SANDEEP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 46 | 2003–2021 |
| INTERMOLECULAR INC | 10 | 2012–2015 |
| KRAUS PHILIP Aself | 7 | 2012–2015 |
| CHUA THAI CHENG | 5 | 2012–2015 |
| NIJHAWAN SANDEEP | 4 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 59 | 2003–2021 |