Inventor
TETSURO AOYAMA
Inventor
JP
Overview
Patents· 2 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth100%
PatentTitleYear
11,225,729Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrate202211,149,357Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrate2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2022Patents assigned to SHINETSU HANDOTAI KK (2)· patent assignee history
2021–2022Based in JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU HANDOTAI KK | 2 | 2021–2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 2 | 2021–2022 |