Inventor

Nai-Han Cheng

Inventor
Hsinchu, TW

Overview

29→
Patents
2008–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 29 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01JElectric discharge tubes or discharge lamps21%
H01LSemiconductor devices17%
C23CCoating metallic material5%
H10DInorganic electric semiconductor devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G01BMeasuring length, thickness or similar linear dimensions4%
Y10TTechnical subjects covered by former us classification4%
G06FElectric digital data processing2%
G21KHandling of particles or ionising radiation not otherwise provided for2%
PatentTitleYear
10,784,079Ion implantation system and source bushing thereof202010,763,117Semiconductor manufacturing apparatus and method thereof202010,541,1643D IC bump height metrology APC202010,269,530Ion beam source for semiconductor ion implantation201910,181,4153D IC bump height metrology APC20199,929,045'Defect inspection and repairing method and associated system and non-transitory computer readable medium'20189,892,931'Semiconductor manufacturing apparatus and method thereof'20189,892,954'Wafer processing system using multi-zone chuck'20189,865,429'Ion implantation with charge and direction control'20189,859,139'3D IC bump height metrology APC'20189,805,913'Ion beam dimension control for ion implantation process and apparatus, and advanced process control'20179,449,889'Method for monitoring ion implantation'20169,315,892'Method and apparatus for controlling beam angle during ion implantation of a semiconductor wafer based upon pressure'20169,239,192'Substrate rapid thermal heating system and methods'20169,218,938'Beam monitoring device, method, and system'20159,070,534'Ion beam dimension control for ion implantation process and apparatus, and advanced process control'20159,048,069'Dosage accuracy monitoring systems of implanters'20159,031,684'Multi-factor advanced process control method and system for integrated circuit fabrication'20159,006,676'Apparatus for monitoring ion implantation'20158,922,122'Ion implantation with charge and direction control'20148,766,207'Beam monitoring device, method, and system'20148,709,528'Wafer processing method and system using multi-zone chuck'20148,592,785'Multi-ion beam implantation apparatus and method'20138,581,204'Apparatus for monitoring ion implantation'20138,241,924'Method and system for controlling an implantation process'20128,212,253'Shallow junction formation and high dopant activation rate of MOS devices'20128,058,134'Junction profile engineering using staged thermal annealing'20118,039,375'Shallow junction formation and high dopant activation rate of MOS devices'20117,385,208'Systems and methods for implant dosage control'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (14)· patent assignee history
2008–2018Based in Hsinchu, TW· patent location history
2011–2015Patents assigned to CHENG NAI-HAN (11)· patent assignee history
2013–2015Patents assigned to LIN CHIN-HSIANG (7)· patent assignee history
2013–2015Patents assigned to YANG CHI-MING (7)· patent assignee history
2014–2020Based in Hsinchu County, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (14)· patent assignee history
2015–2020Based in Zhudong Township, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG142008–2016
TAIWAN SEMICONDUCTOR MFG CO LTD142015–2020
CHENG NAI-HANself112011–2015
LIN CHIN-HSIANG72013–2015
YANG CHI-MING72013–2015
Locations
LocationPatentsSpan
Hsinchu, TW192008–2018
Zhudong Township, TW62015–2020
Hsinchu County, TW42014–2020