Inventor

Kohei Eguchi

Inventor

Tokyo, JP

Overview

11→

Patents

1998–2012

Patent span

Electricity

Primary field (CPC H)

Patents· 11 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices28%

H10BElectronic memory devices24%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%

H04QSelecting7%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%

A47KSanitary equipment3%

H04JMultiplex communication3%

H04LTransmission of digital information, e.g. telegraphic communication3%

PatentTitleYear

8,256,035'Toilet seat handle'2012 7,881,609'Optical access system and ranging method for optical access system'2011 6,917,076'Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device'2005 6,657,229'Semiconductor device having multiple transistors sharing a common gate'2003 6,656,781'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS'2003 6,526,053'Method and apparatus for transmitting packets and network using the same'2003 6,486,013'Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide'2002 6,482,692'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS'2002 6,201,275'Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same'2001 6,093,575'Semiconductor device and production method of a semiconductor device having a capacitor'2000 5,714,787'Semiconductor device with a reduced element isolation region'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2003Patents assigned to NIPPON STEEL CORP (6)· patent assignee history

1998–2005Based in Tokyo, JP· patent location history

2003–2011Patents assigned to OKI ELECTRIC IND CO LTD (2)· patent assignee history

2003–2005Patents assigned to UNITED MICROELECTRONICS CORP (2)· patent assignee history

2011Based in Chiba, JP· patent location history

2012Patents assigned to EGUCHI KOHEI (1)· patent assignee history

2012Based in La Canada, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NIPPON STEEL CORP	6	1998–2003
OKI ELECTRIC IND CO LTD	2	2003–2011
UNITED MICROELECTRONICS CORP	2	2003–2005
EGUCHI KOHEIself	1	2012

Locations

Location	Patents	Span
Tokyo, JP	9	1998–2005
La Canada, California, US	1	2012
Chiba, JP	1	2011