Inventor
DONG SEUP LEE
Inventor
US
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
12,532,493Transistor with buffer structure having carbon doped profile202612,520,547Monolithic integration of high and low-side GaN FETS with screening back gating effect202612,444,600Gallium nitride device having a combination of surface passivation layers202512,211,835Group III-V IC with different sheet resistance 2-DEG resistors202512,166,119Gallium nitride transistor with a doped region202412,142,639Electronic device with gallium nitride transistors and method of making same202411,978,790Normally-on gallium nitride based transistor with p-type gate202411,888,027Monolithic integration of high and low-side GaN FETs with screening back gating effect202411,769,824Gallium nitride transistor with a doped region202311,742,390Electronic device with gallium nitride transistors and method of making same202311,527,619Nitride-based semiconductor layer sharing between transistors202211,508,830Transistor with buffer structure having carbon doped profile2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TEXAS INSTRUMENTS INC (12)· patent assignee history
2022–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 12 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 12 | 2022–2026 |