Inventor
Hsin-Lung Chao
Inventor
Hsinchu, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
PatentTitleYear
10,840,143Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment mark202010,177,036Semiconductor arrangement with fins having multiple heights and a dielectric layer recessed in the substrate20199,911,658'Methods for forming a semiconductor arrangement with multiple-height fins and substrate trenches'20189,515,184'Semiconductor arrangement with multiple-height fins and substrate trenches'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2016–2020Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2016–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 4 | 2016–2020 |