Inventor
John L. Ebel
Inventor
Beavercreek, OH, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01HElectric switches12%
B81BMicrostructural devices or systems, e.g. micromechanical devices9%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
G11CStatic stores3%
H01GCapacitors3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
7,977,137'Latching zip-mode actuated mono wafer MEMS switch method'20117,960,804'Latching zip-mode actuated mono wafer MEMS switch'20117,617,577'Method of forming a low cost digital variable capacitor'20097,381,583'MEMS RF switch integrated process'20087,145,213'MEMS RF switch integrated process'20066,884,717'Stiffened backside fabrication for microwave radio frequency wafers'20056,653,214'Measured via-hole etching'20036,222,210'Complementary heterostructure integrated single metal transistor apparatus'20016,198,116'Complementary heterostructure integrated single metal transistor fabrication method'20016,066,865'Single layer integrated metal enhancement mode field-effect transistor apparatus'20006,020,226'Single layer integrated metal process for enhancement mode field-effect transistor'20006,004,881'Digital wet etching of semiconductor materials'19995,976,920'Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)'19995,940,694'Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops'19995,869,364'Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)'19995,796,131'Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal'19985,698,870'High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal'19975,698,900'Field effect transistor device with single layer integrated metal and retained semiconductor masking'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–1998Patents assigned to US ARMY (3)· patent assignee history
1997–2011Based in Beavercreek, OH, US· patent location history
1999–2011Patents assigned to US AIR FORCE (13)· patent assignee history
2009Based in Centerville, OH, US· patent location history
2011Patents assigned to US OF AMERICA AS RESPRESENTED BY THE SECRETARY OF THE AIR FORCE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| US AIR FORCE | 13 | 1999–2011 |
| US ARMY | 3 | 1997–1998 |
| US OF AMERICA AS RESPRESENTED BY THE SECRETARY OF THE AIR FORCE | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Beavercreek, OH, US | 17 | 1997–2011 |
| Centerville, OH, US | 1 | 2009 |