Inventor
Edmund K. Banghart
Inventor
Pittsford, NY, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices28%
H10DInorganic electric semiconductor devices25%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
11,094,805Lateral heterojunction bipolar transistors with asymmetric junctions202110,522,679Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures201910,347,740Fin structures and multi-Vt scheme based on tapered fin and method to form20199,679,990'Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication'20179,583,625'Fin structures and multi-Vt scheme based on tapered fin and method to form'20179,570,291'Semiconductor substrates and methods for processing semiconductor substrates'20179,087,860'Fabricating fin-type field effect transistor with punch-through stop region'20158,994,139'Lateral overflow drain and channel stop regions in image sensors'20158,772,891'Lateral overflow drain and channel stop regions in image sensors'20148,329,499'Method of forming lateral overflow drain and channel stop regions in image sensors'20126,624,453'Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage'20035,804,465'Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumulation mode'19985,714,776'Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumlation mode'19985,448,089'Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range'19955,227,313'Process for making backside illuminated image sensors'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2003Patents assigned to EASTMAN KODAK CO (5)· patent assignee history
1993–2021Based in Pittsford, NY, US· patent location history
2012–2015Patents assigned to BANGHART EDMUND K (3)· patent assignee history
2012–2015Patents assigned to DOAN HUNG Q (3)· patent assignee history
2012–2015Patents assigned to STEVENS ERIC G (3)· patent assignee history
2015–2019Patents assigned to GLOBALFOUNDRIES INC (6)· patent assignee history
2015Based in Rochester, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 6 | 2015–2019 |
| EASTMAN KODAK CO | 5 | 1993–2003 |
| BANGHART EDMUND Kself | 3 | 2012–2015 |
| DOAN HUNG Q | 3 | 2012–2015 |
| STEVENS ERIC G | 3 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pittsford, New York, US | 14 | 1993–2021 |
| Rochester, New York, US | 1 | 2015 |