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Inventor

Toshihisa Katamime

Inventor
Saitama, JP

Overview

2→
Patents
1999–2000
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices29%
H10HInorganic light-emitting semiconductor devices having potential barriers29%
C23CCoating metallic material14%
C30BSingle-crystal growth14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
PatentTitleYear
6,100,105'Fabrication of InGaAlN based compound semiconductor device'20005,980,632'Member for use in production device for semiconductors'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2000Patents assigned to SUMITOMO CHEMICAL CO (2)· patent assignee history
1999Based in Tsukuba, JP· patent location history
2000Based in Saitama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO CHEMICAL CO21999–2000
Locations
LocationPatentsSpan
Saitama, JP12000
Tsukuba, JP11999