Inventor
Jian-Gang Zhu
Inventor
San Jose, CA, US
Overview
Patents· 49 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores19%
H10NElectric solid-state devices not otherwise provided for16%
G11BInformation storage based on relative movement between record carrier and transducer13%
H01LSemiconductor devices13%
H10BElectronic memory devices11%
H01FMagnets9%
B82YSpecific uses or applications of nanostructures7%
G01RMeasuring electric variables3%
G06FElectric digital data processing2%
H04LTransmission of digital information, e.g. telegraphic communication2%
PatentTitleYear
11,030,738Image defect identification202111,025,704Methods and systems for enhanced component relationships in representations of distributed computing systems202110,867,651Initialization process for magnetic random access memory (MRAM) production202010,861,485Write heads configured to redirect current202010,784,310Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices202010,777,219Write heads configured to redirect current202010,763,428Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications202010,699,765Methods and circuits for programming STT-MRAM cells for reducing back-hopping202010,665,773Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)202010,658,577Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy202010,650,8733D perpendicular magnetic crossbar memory202010,522,744High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications201910,522,752Magnetic layer for magnetic random access memory (MRAM) by moment enhancement201910,522,747Fully compensated synthetic ferromagnet for spintronics applications201910,509,074Electrical testing apparatus for spintronics devices201910,431,736Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy201910,325,639Initialization process for magnetic random access memory (MRAM) production201910,230,044Fully compensated synthetic ferromagnet for spintronics applications201910,115,892Multilayer structure for reducing film roughness in magnetic devices201810,090,007Dual-side spin transfer spin torque oscillator201810,049,694Heat-assisted magnetic recording head having a non-uniform air-bearing surface201810,026,431Magnetic shift register201810,014,465Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy20189,842,988'Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications'20179,805,816'Implementation of a one time programmable memory using a MRAM stack design'20179,780,299'Multilayer structure for reducing film roughness in magnetic devices'20179,425,387'Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing'20169,300,301'Nonvolatile magnetic logic device'20169,030,783'Phase detection of spin torque oscillator reader excited through parametric excitation'20158,675,456'Method of writing data with binary anisotropy media'20148,476,925'Magnetic switching cells and methods of making and operating same'20138,449,730'Buffer layers for L10 thin film perpendicular media'20138,400,066'Magnetic logic circuits and systems incorporating same'20138,211,557'Binary anisotropy media'20127,826,258'Crossbar diode-switched magnetoresistive random access memory system'20107,616,412'Perpendicular spin-torque-driven magnetic oscillator'20097,193,286'Radial field generating selection conductor device'20076,956,257'Magnetic memory element and memory device including same'20056,877,116'Method and apparatus for determining bit error rate in a sampled data system without requiring read channel circuitry'20056,807,033'Magnetic sensor with reduced wing region magnetic sensitivity'20046,754,016'Frequency modulation pattern for disk drive assemblies'20046,667,862'Magnetoresistive read head having permanent magnet on top of magnetoresistive element'20036,404,601'Merged write head with magnetically isolated poletip'20026,391,483'Magnetic device and method of forming same'20026,392,850'Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals'20026,185,077'Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure'20015,859,754'Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals'19995,784,224'Compact read/write head having biased GMR element'19985,576,914'Compact read/write head having biased GMR element'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2002Patents assigned to READ RITE CORP (6)· patent assignee history
1996–2002Based in Roseville, MN, US· patent location history
2001–2020Based in Pittsburgh, PA, US· patent location history
2002–2020Patents assigned to UNIV CARNEGIE MELLON (15)· patent assignee history
2012–2014Patents assigned to LAUGHLIN DAVID E (3)· patent assignee history
2015–2020Based in San Jose, CA, US· patent location history
2016–2020Patents assigned to HEADWAY TECH INC (9)· patent assignee history
2019–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (11)· patent assignee history
2021Based in Shanghai, CN· patent location history
2021Based in Durham, NC, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CARNEGIE MELLON | 15 | 2002–2020 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 11 | 2019–2020 |
| HEADWAY TECH INC | 9 | 2016–2020 |
| READ RITE CORP | 6 | 1996–2002 |
| LAUGHLIN DAVID E | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 22 | 2015–2020 |
| Pittsburgh, Pennsylvania, US | 20 | 2001–2020 |
| Roseville, Minnesota, US | 3 | 1996–2002 |
| Shanghai, CN | 1 | 2021 |
| Durham, NC, US | 1 | 2021 |