Inventor
YIXIONG YANG
Inventor
US
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10DInorganic electric semiconductor devices18%
C23CCoating metallic material14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10BElectronic memory devices4%
H01JElectric discharge tubes or discharge lamps2%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds1%
B82YSpecific uses or applications of nanostructures1%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium1%
PatentTitleYear
12,590,368Method of forming interconnect structure202612,588,437Integrated dipole region for transistor202612,467,133Conformal molybdenum deposition202512,463,093Method of tuning film properties of metal nitride using plasma202512,453,086Low resistivity metal contact stack202512,438,044Methods and apparatus for seam reduction or elimination202512,394,619Metal oxide preclean for bottom-up gapfill in MEOL and BEOL202512,387,975Thermal process chamber lid with backside pumping202512,374,568One chamber multi-station selective metal removal202512,328,872Liner for V-NAND word line stack202512,288,717Metal based hydrogen barrier202512,230,688MOSFET gate engineerinng with dipole films202512,183,798Threshold voltage modulation for gate-all-around FET architecture202412,114,488Enhancing gapfill performance of dram word line202412,112,951Integrated dipole region for transistor202412,104,243Methods and apparatus for processing a substrate202412,100,595Amorphous silicon-based scavenging and sealing EOT202412,051,734PMOS high-k metal gates202412,020,982Metal based hydrogen barrier202412,022,650Low resistivity DRAM buried word line stack202411,997,849V-NAND stacks with dipole regions202411,996,455P-type dipole for P-FET202411,961,734Treatments to enhance material structures202411,955,332Treatments to enhance material structures202411,932,939Lids and lid assembly kits for atomic layer deposition chambers202411,907,331Method and system for evaluating fractal dimension of particle matter in dispersing system202411,908,914Methods of forming semiconductor structures202411,894,233Electronic device having an oxygen free platinum group metal film202411,888,045Integrated dipole flow for transistor202411,869,806Methods of forming molybdenum contacts202411,776,980Methods for reflector film growth202311,715,667Thermal process chamber lid with backside pumping202311,658,218P-type dipole for p-FET202311,646,226Method of tuning film properties of metal nitride using plasma202311,587,936Low resistivity DRAM buried word line stack202311,552,177PMOS high-K metal gates202311,488,830Oxygen free deposition of platinum group metal films202211,476,267Liner for V-NAND word line stack202211,437,271Seamless gap fill202211,417,517Treatments to enhance material structures202211,384,432Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate202211,359,282Methods for forming impurity free metal alloy films202211,335,591Thermal process chamber lid with backside pumping202211,289,579P-type dipole for p-FET202211,245,022Integrated dipole flow for transistor2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to APPLIED MATERIALS INC (44)· patent assignee history
2022–2026Based in US· patent location history
2024Patents assigned to UNIV HUAZHONG SCIENCE TECH (1)· patent assignee history
2024Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 44 | 2022–2026 |
| UNIV HUAZHONG SCIENCE TECH | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 44 | 2022–2026 |
| CN | 1 | 2024 |