Inventor
JI-FENG YING
Inventor
TW
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices21%
G11CStatic stores20%
H10NElectric solid-state devices not otherwise provided for17%
H01FMagnets14%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B82YSpecific uses or applications of nanostructures2%
G01BMeasuring length, thickness or similar linear dimensions1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
PatentTitleYear
12,424,255Crystal seed layer for magnetic random access memory (MRAM)202512,382,841Magnetic device and magnetic random access memory202512,300,293Method for writing to magnetic random access memory202512,302,587Memory device and semiconductor die, and method of fabricating memory device202512,082,511Magnetic random access memory202412,075,631Magnetic random access memory and manufacturing method thereof202412,035,636Magnetic device and magnetic random access memory202412,029,046Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process202411,842,757Crystal seed layer for magnetic random access memory (MRAM)202311,825,664Memory device and semiconductor die, and method of fabricating memory device202311,762,046Method and apparatus for measuring magnetic field strength202311,727,974Method for writing to magnetic random access memory202311,672,185Magnetic device and magnetic random access memory202311,659,718Magnetic random access memory and manufacturing method thereof202311,527,275Crystal seed layer for magnetic random access memory (MRAM)202211,525,668Apparatus and method for metrology202211,374,169Magnetic random access memory202211,289,538Memory device and semiconductor die, and method of fabricating memory device202211,244,714Assisted write method for magnetic random access memory202211,238,911Method for writing to magnetic random access memory202211,165,012Magnetic device and magnetic random access memory2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (21)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 21 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 21 | 2021–2025 |