Inventor
HUA CHUNG
Inventor
US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01JElectric discharge tubes or discharge lamps17%
C23CCoating metallic material14%
C30BSingle-crystal growth4%
H10DInorganic electric semiconductor devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B08BCleaning in general3%
C01BNon-metallic elements1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
PatentTitleYear
12,297,559Method and apparatus for low temperature selective epitaxy in a deep trench202511,959,167Selective cobalt deposition on copper surfaces202411,946,135Low temperature deposition of iridium containing films202411,791,166Selective etch process using hydrofluoric acid and ozone gases202311,791,181Methods for the treatment of workpieces202311,649,559Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate202311,643,721Low temperature deposition of iridium containing films202311,626,269Chamber seasoning to improve etch uniformity by reducing chemistry202311,495,437Surface pretreatment process to improve quality of oxide films produced by remote plasma202211,495,456Ozone for selective hydrophilic surface treatment202211,462,413Processing of workpieces using deposition process and etch process202211,384,429Selective cobalt deposition on copper surfaces202211,387,115Silicon mandrel etch after native oxide punch-through202211,387,111Processing of workpieces with reactive species generated using alkyl halide202211,315,801Processing of workpieces using ozone gas and hydrogen radicals202211,251,050Silicon oxide selective dry etch process202211,195,718Spacer open process by dual plasma202111,183,397Selective etch process using hydrofluoric acid and ozone gases202111,164,767Integrated system for semiconductor process202111,164,727Processing of workpieces using hydrogen radicals and ozone gas202111,164,742Selective deposition using methylation treatment202111,164,725Generation of hydrogen reactive species for processing of workpieces2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to BEIJING E TOWN SEMICONDUCTOR TECH CO LTD (15)· patent assignee history
2021–2023Patents assigned to MATTSON TECH INC (15)· patent assignee history
2021–2025Patents assigned to APPLIED MATERIALS INC (7)· patent assignee history
2021–2025Based in US· patent location history
2022Patents assigned to MATTSON TECH IN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| BEIJING E TOWN SEMICONDUCTOR TECH CO LTD | 15 | 2021–2023 |
| MATTSON TECH INC | 15 | 2021–2023 |
| APPLIED MATERIALS INC | 7 | 2021–2025 |
| MATTSON TECH IN | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 22 | 2021–2025 |