Inventor
Yoshibumi Nakajima
Inventor
Ashikaga, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices55%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1036%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
7,005,688'Semiconductor device with impurity layer to prevent depletion layer expansion'20066,914,280'Switching circuit device'20056,787,871'Integrated schottky barrier diode and manufacturing method thereof'20046,777,277'Manufacturing method of Schottky barrier diode'20046,682,968'Manufacturing method of Schottky barrier diode'20046,627,967'Schottky barrier diode'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2006Patents assigned to SANYO ELECTRIC CO (6)· patent assignee history
2003–2006Based in Ashikaga, JP· patent location history
2004Based in Tochigi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANYO ELECTRIC CO | 6 | 2003–2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ashikaga, JP | 4 | 2003–2006 |
| Tochigi, JP | 2 | 2004 |