Inventor
Shengwu Chang
Inventor
South Hamilton, MA, US
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps64%
G21KHandling of particles or ionising radiation not otherwise provided for10%
H01LSemiconductor devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C23CCoating metallic material5%
H05HPlasma technique5%
H01BCables2%
PatentTitleYear
10,804,068Electostatic filter and method for controlling ion beam properties using electrostatic filter202010,790,116Electostatic filter and method for controlling ion beam using electostatic filter202010,714,301Conductive beam optics for reducing particles in ion implanter202010,665,415Apparatus and method for controlling ion beam properties using electrostatic filter202010,504,682Conductive beam optic containing internal heating element201910,468,224Apparatus and method for controlling ion beam properties using energy filter201910,074,514Apparatus and method for improved ion beam current20189,934,928Source housing assembly for controlling ion beam extraction stability and ion beam current20189,679,745'Controlling an ion beam in a wide beam current operation range'20179,520,204'Cold stripper for high energy ion implanter with tandem accelerator'20169,437,341'Method and apparatus for generating high current negative hydrogen ion beam'20169,396,903'Apparatus and method to control ion beam current'20169,281,165'Bias electrodes for tandem accelerator'20169,263,231'Moveable current sensor for increasing ion beam utilization during ion implantation'20169,165,744'Apparatus for treating ion beam'20159,012,337'Platen control'20159,006,692'Apparatus and techniques for controlling ion implantation uniformity'20158,853,653'Apparatus and techniques for controlling ion implantation uniformity'20148,664,619'Hybrid electrostatic lens for improved beam transmission'20148,330,125'Ion beam tuning'20127,622,724'High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown'20097,462,844'Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation'20087,459,692'Electron confinement inside magnet of ion implanter'20087,442,944'Ion beam implant current, spot width and position tuning'20087,397,047'Technique for tuning an ion implanter system'20087,355,188'Technique for uniformity tuning in an ion implanter system'20087,253,423'Technique for uniformity tuning in an ion implanter system'20077,138,768'Indirectly heated cathode ion source'20067,045,799'Weakening focusing effect of acceleration-deceleration column of ion implanter'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2016Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (18)· patent assignee history
2006–2020Based in South Hamilton, MA, US· patent location history
2006Based in Newburyport, MA, US· patent location history
2009Based in Hamilton, MA, US· patent location history
2012–2015Patents assigned to CHANG SHENGWU (2)· patent assignee history
2012–2015Patents assigned to MCCLELLAN MATTHEW P (2)· patent assignee history
2016–2020Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (8)· patent assignee history
2020Patents assigned to APPLIED MATERIALS INC (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT | 18 | 2006–2016 |
| VARIAN SEMICONDUCTOR EQUIPMENT ASS INC | 8 | 2016–2020 |
| APPLIED MATERIALS INC | 3 | 2020 |
| CHANG SHENGWUself | 2 | 2012–2015 |
| MCCLELLAN MATTHEW P | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| South Hamilton, Massachusetts, US | 27 | 2006–2020 |
| Hamilton, Massachusetts, US | 1 | 2009 |
| Newburyport, Massachusetts, US | 1 | 2006 |