Inventor

Louis Menigaux

Inventor
Bures sur Yvette, FR

Overview

13→
Patents
1987–1999
Patent span
Electricity
Primary field (CPC H)

Patents· 13 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light28%
H10HInorganic light-emitting semiconductor devices having potential barriers22%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests22%
G02BOptical elements, systems or apparatus16%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
5,930,278'Multi-wavelength laser-emitting component'19995,548,610'Surface-emitting power laser and process for fabricating this laser'19965,518,965'Process for producing a structure integrating a cleaved optical guide with an optical fibre support for a guide-fibre optical coupling'19965,373,570'Process for forming a structure with integrated optical waveguide and mirror, and structure obtained'19945,261,014'Optoelectronic device with integrated optical guide and photo-detector.'19935,190,883'Method for making an integrated light guide detector structure made of a semiconductive material'19935,115,285'Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device'19925,039,627'Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device'19914,955,030'Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect, and device obtained thereby'19904,925,811'Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect'19904,742,013'Process for the production of a semiconductor laser with tape geometry and laser obtained by this process'19884,720,468'Process for the production of a monolithic integrated optical device incorporating a semiconductor laser and device obtained by this process'19884,648,940'Process for manufacturing a semiconductor laser having a buried ribbon'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1988Patents assigned to MENIGAUX LOUIS (3)· patent assignee history
1987–1988Patents assigned to SANSONETTI PIERRE (2)· patent assignee history
1987–1999Based in Bures sur Yvette, FR· patent location history
1988Patents assigned to CARENCO ALAIN (1)· patent assignee history
1990–1992Patents assigned to FRANCE ETAT (4)· patent assignee history
1993–1999Patents assigned to FRANCE TELECOM (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FRANCE TELECOM61993–1999
FRANCE ETAT41990–1992
MENIGAUX LOUISself31987–1988
SANSONETTI PIERRE21987–1988
CARENCO ALAIN11988
Locations
LocationPatentsSpan
Bures sur Yvette, FR131987–1999