Inventor
RU-YING TONG
Inventor
US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for22%
G11CStatic stores20%
H10BElectronic memory devices15%
H01FMagnets14%
H01LSemiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G01RMeasuring electric variables3%
B82YSpecific uses or applications of nanostructures2%
C23CCoating metallic material2%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner2%
PatentTitleYear
12,575,328High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications202612,414,476Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO)202512,356,865Multilayer structure for reducing film roughness in magnetic devices202512,249,450Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation202512,213,385Protective passivation layer for magnetic tunnel junctions202512,185,641Silicon oxynitride based encapsulation layer for magnetic tunnel junctions202412,167,699Magnetic layer for magnetic random access memory (MRAM) by moment enhancement202412,082,509Dual magnetic tunnel junction (DMTJ) stack design202412,027,191Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer202411,956,971Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices202411,930,717Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM202411,930,716Reduction of capping layer resistance area product for magnetic device applications202411,849,646Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)202311,758,820Protective passivation layer for magnetic tunnel junctions202311,696,511Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions202311,683,994Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio202311,672,182Seed layer for multilayer magnetic materials202311,569,441Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy202311,563,170Fully compensated synthetic ferromagnet for spintronics applications202311,417,835Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)202211,411,174Silicon oxynitride based encapsulation layer for magnetic tunnel junctions202211,316,098High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications202211,316,103Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage202211,289,645Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies202211,264,566Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio202211,264,560Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (22)· patent assignee history
2022–2023Patents assigned to HEADWAY TECH INC (4)· patent assignee history
2022–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 22 | 2022–2026 |
| HEADWAY TECH INC | 4 | 2022–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 26 | 2022–2026 |