Inventor

Mikko Ritala

Inventor

Espoo, FI

Overview

49→

Patents

2002–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material29%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H01LSemiconductor devices12%

C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium6%

H10NElectric solid-state devices not otherwise provided for6%

H10DInorganic electric semiconductor devices5%

C30BSingle-crystal growth4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

C01GCompounds containing metals not covered by subclasses c01d or c01f2%

C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds2%

PatentTitleYear

11,072,622Synthesis and use of precursors for ALD of tellurium and selenium thin films2021 11,047,046Vapor deposition of thin films comprising gold2021 11,047,042Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films2021 11,014,866Synthesis and use of precursors for vapor deposition of tungsten containing thin films2021 10,941,487Synthesis and use of precursors for ALD of group VA element containing thin films2021 10,847,366Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process2020 10,741,403Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures2020 10,734,223Method for depositing a metal chalcogenide on a substrate by cyclical deposition2020 10,731,249Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus2020 10,619,244Synthesis and use of precursors for ALD of group VA element containing thin films2020 10,619,242Atomic layer deposition of rhenium containing thin films2020 10,468,261Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures2019 10,468,262Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures2019 10,358,407Synthesis and use of precursors for vapor deposition of tungsten containing thin films2019 10,344,378Precursors and methods for atomic layer deposition of transition metal oxides2019 10,319,588Method for depositing a metal chalcogenide on a substrate by cyclical deposition2019 10,308,673Synthesis and use of precursors for ALD of tellurium and selenium thin films2019 10,208,379Synthesis and use of precursors for ALD of group VA element containing thin films2019 10,145,009Vapor deposition of thin films comprising gold2018 9,909,211'Vapor deposition of LiF thin films'2018 9,878,516'Metamaterial thin films'2018 9,828,674Synthesis and use of precursors for ALD of group VA element containing thin films2017 9,783,563'Synthesis and use of precursors for ALD of tellurium and selenium thin films'2017 9,765,431'Atomic layer deposition of metal phosphates and lithium silicates'2017 9,677,173'Precursors and methods for atomic layer deposition of transition metal oxides'2017 9,646,820'Methods for forming conductive titanium oxide thin films'2017 9,394,609'Atomic layer deposition of aluminum fluoride thin films'2016 9,382,615'Vapor deposition of LiF thin films'2016 9,365,926'Precursors and methods for atomic layer deposition of transition metal oxides'2016 9,315,896'Synthesis and use of precursors for ALD of group VA element containing thin films'2016 9,315,894'Atomic layer deposition of metal phosphates and lithium silicates'2016 9,223,203'Microcontact printed films as an activation layer for selective atomic layer deposition'2015 9,175,390'Synthesis and use of precursors for ALD of tellurium and selenium thin films'2015 9,169,557'Process for producing oxide films'2015 8,945,675'Methods for forming conductive titanium oxide thin films'2015 8,685,165'Metal oxide films'2014 8,372,483'Methods for forming thin films comprising tellurium'2013 7,713,584'Process for producing oxide films'2010 7,618,681'Process for producing bismuth-containing oxide films'2009 7,498,272'Method of depositing rare earth oxide thin films'2009 7,377,976'Method for growing thin oxide films'2008 7,220,451'Process for producing metal thin films by ALD'2007 7,108,747'Method for growing oxide thin films containing barium and strontium'2006 6,932,867'Method for growing thin oxide films'2005 6,858,546'Method of depositing rare earth oxide thin films'2005 6,824,816'Process for producing metal thin films by ALD'2004 6,706,115'Method for preparing metal nitride thin films'2004 6,632,279'Method for growing thin oxide films'2003 6,416,577'Method for coating inner surfaces of equipment'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2021Based in Espoo, FI· patent location history

2004–2016Patents assigned to ASM INT (15)· patent assignee history

2008–2018Patents assigned to RITALA MIKKO (10)· patent assignee history

2008–2018Patents assigned to LESKELA MARKKU (5)· patent assignee history

2016–2021Patents assigned to ASM IP HOLDING BV (23)· patent assignee history

2017–2021Patents assigned to ASM INT NV (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM IP HOLDING BV	23	2016–2021
ASM INT	15	2004–2016
RITALA MIKKOself	10	2008–2018
ASM INT NV	6	2017–2021
LESKELA MARKKU	5	2008–2018

Locations

Location	Patents	Span
Espoo, FI	49	2002–2021