Inventor

YU-YUN PENG

Inventor
TW

Overview

40→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 40 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10DInorganic electric semiconductor devices18%
B82YSpecific uses or applications of nanostructures7%
C23CCoating metallic material1%
C09KMaterials for miscellaneous applications, not provided for elsewhere1%
E02BHydraulic engineering1%
E02DFoundations1%
E21BEarth or rock drilling1%
PatentTitleYear
12,599,042Carrier structure and methods of forming the same202612,575,141Metal-comprising bottom isolation structures202612,575,123Semiconductor device and manufacturing method thereof202612,550,720Semiconductor structure and manufacturing method thereof202612,532,716Low thermal budget dielectric for semiconductor devices202612,512,317Dielectric material and methods of forming same202512,512,439Wafer bonding method and semiconductor structure obtained by the same202512,489,082Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate202512,439,642Seam-top seal for dielectrics202512,412,775Isolation structures in semiconductor devices202512,347,717Debonding structures for wafer bonding202512,341,013Method and structure for barrier-less plug202512,336,214Inner spacers for gate-all-around semiconductor devices202512,315,837Storage layers for wafer bonding202512,308,312Interconnect structure and method for manufacturing the interconnect structure202512,283,618Inner spacer for semiconductor device202512,255,249Inner spacer structures for gate-all-around field effect transistors202512,255,239Liner layer for backside contacts of semiconductor devices202512,051,592Method and structure for barrier-less plug202412,034,075Device of dielectric layer202411,996,363Interconnect structure including a heat dissipation layer and methods of forming the same202411,972,974Self-aligned barrier for metal vias202411,942,447Storage layers for wafer bonding202411,942,358Low thermal budget dielectric for semiconductor devices202411,935,752Device of dielectric layer202411,908,921Transistor isolation structures202411,854,796Semiconductor device structure with gate spacer202311,855,214Inner spacers for gate-all-around semiconductor devices202311,837,515Semiconductor device and method202311,823,896Conductive structure formed by cyclic chemical vapor deposition202311,817,343Dielectric gap fill202311,804,539Transistor isolation structures202311,637,062Interconnect structure and method for manufacturing the interconnect structure202311,488,869Transistor isolation structures202211,393,677Semiconductor device structure with gate spacer202211,373,866Dielectric material and methods of forming same202211,282,712Method for preventing bottom layer wrinkling in a semiconductor device202211,257,753Interconnect structure and method for manufacturing the interconnect structure202211,227,794Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure202211,158,539Method and structure for barrier-less plug2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (39)· patent assignee history
2021–2026Based in TW· patent location history
2024Patents assigned to TAIWAN SEMINCONDUCTOR MFG CO LTD (1)· patent assignee history
2026Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD392021–2026
TAIWAN SEMICONDUCTOR MFG COMPANY LTD12026
TAIWAN SEMINCONDUCTOR MFG CO LTD12024
Locations
LocationPatentsSpan
TW402021–2026