Inventor
KER-HSIAO HUO
Inventor
TW
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H03KPulse technique13%
PatentTitleYear
12,211,935Semiconductor structure and associated fabricating method202511,862,675High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device202411,508,845Semiconductor structure and associated fabricating method202211,410,991Series resistor over drain region in high voltage device202211,145,713High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (5)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 5 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 5 | 2021–2025 |