Inventor
Katsumi Okashita
Inventor
Osaka, JP
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
H10DInorganic electric semiconductor devices28%
H01JElectric discharge tubes or discharge lamps26%
C23CCoating metallic material4%
G03GElectrography2%
PatentTitleYear
9,164,467'Blade member and cleaning blade'20158,652,953'Plasma doping method with gate shutter'20148,536,000'Method for producing a semiconductor device have fin-shaped semiconductor regions'20138,409,939'Semiconductor device and method for fabricating the same'20138,257,501'Plasma doping device with gate shutter'20128,258,585'Semiconductor device'20128,193,080'Method for fabricating semiconductor device and plasma doping system'20128,129,202'Plasma doping method and apparatus'20128,124,507'Semiconductor device and method for fabricating the same'20128,105,926'Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region'20128,063,437'Semiconductor device and method for producing the same'20118,030,187'Method for manufacturing semiconductor device'20118,012,862'Method for manufacturing semiconductor device using plasma doping'20118,004,045'Semiconductor device and method for producing the same'20117,972,945'Plasma doping apparatus and method, and method for manufacturing semiconductor device'20117,939,388'Plasma doping method and plasma doping apparatus'20117,871,853'Plasma doping method and apparatus employed in the same'20117,858,479'Method and apparatus of fabricating semiconductor device'20107,858,155'Plasma processing method and plasma processing apparatus'20107,820,230'Plasma doping processing device and method thereof'20107,800,165'Semiconductor device and method for producing the same'20107,790,586'Plasma doping method'20107,759,254'Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device'20107,754,503'Method for producing semiconductor device and semiconductor producing apparatus'20107,601,619'Method and apparatus for plasma processing'20097,582,492'Method of doping impurities, and electronic element using the same'20097,456,085'Method for introducing impurities'20087,407,874'Plasma doping method'20087,358,511'Plasma doping method and plasma doping apparatus'20087,348,264'Plasma doping method'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2014Patents assigned to PANASONIC CORP (26)· patent assignee history
2008–2014Based in Osaka, JP· patent location history
2008–2010Based in Tokyo, JP· patent location history
2011–2014Patents assigned to MIZUNO BUNJI (10)· patent assignee history
2011–2014Patents assigned to OKASHITA KATSUMI (10)· patent assignee history
2011–2014Patents assigned to SASAKI YUICHIRO (10)· patent assignee history
2012–2014Patents assigned to ITO HIROYUKI (4)· patent assignee history
2015Based in Aichi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PANASONIC CORP | 26 | 2008–2014 |
| MIZUNO BUNJI | 10 | 2011–2014 |
| OKASHITA KATSUMIself | 10 | 2011–2014 |
| SASAKI YUICHIRO | 10 | 2011–2014 |
| ITO HIROYUKI | 4 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Osaka, JP | 24 | 2008–2014 |
| Tokyo, JP | 5 | 2008–2010 |
| Aichi, JP | 1 | 2015 |