Inventor
Hisayuki Imamura
Inventor
Saitama, JP
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H05Kprimary
H05KPrinted circuits21%
C04BLime, magnesia17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
Y10TTechnical subjects covered by former us classification11%
C01BNon-metallic elements6%
H01LSemiconductor devices6%
B23KSoldering or unsoldering4%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
B22FWorking metallic powder2%
PatentTitleYear
10,669,210Silicon nitride sintered substrate, silicon nitride sintered substrate sheet, circuit substrate, and production method for silicon nitride sintered substrate202010,559,509Insulating substrate and semiconductor device using same202010,057,992Ceramic circuit substrate and its production method20189,780,011'Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module'20178,858,865'Silicon nitride substrate manufacturing method, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor module'20148,563,869'Circuit board and semiconductor module using this, production method for circuit board'20137,915,533'Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module'20117,372,132'Resin encapsulated semiconductor device and the production method'20087,031,166'Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate'20066,846,765'Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate'20055,968,426'Method of producing porous silicon nitride ceramics having high strength and low thermal conductivity'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999Patents assigned to AGENCY IND SCIENCE TECHN (1)· patent assignee history
1999Based in Aichi, JP· patent location history
2005–2020Patents assigned to HITACHI METALS LTD (10)· patent assignee history
2005–2013Based in Saitama, JP· patent location history
2008Based in Fukaya, JP· patent location history
2013–2017Patents assigned to IMAMURA HISAYUKI (3)· patent assignee history
2013–2017Patents assigned to WATANABE JUNICHI (3)· patent assignee history
2013–2014Patents assigned to KAGA YOUICHIROU (2)· patent assignee history
2014–2020Based in Tokyo, JP· patent location history
2017–2018Based in Kitakyushu, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI METALS LTD | 10 | 2005–2020 |
| IMAMURA HISAYUKIself | 3 | 2013–2017 |
| WATANABE JUNICHI | 3 | 2013–2017 |
| KAGA YOUICHIROU | 2 | 2013–2014 |
| AGENCY IND SCIENCE TECHN | 1 | 1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saitama, JP | 4 | 2005–2013 |
| Tokyo, JP | 3 | 2014–2020 |
| Kitakyushu, JP | 2 | 2017–2018 |
| Fukaya, JP | 1 | 2008 |
| Aichi, JP | 1 | 1999 |