Inventor
Neng-Hui Yang
Inventor
Hsinchu, TW
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10DInorganic electric semiconductor devices27%
H01LSemiconductor devices19%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
C23CCoating metallic material5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
B08BCleaning in general1%
C11DDetergent compositions1%
C25DProcesses for the electrolytic or electrophoretic production of coatings1%
PatentTitleYear
10,128,366Field-effect transistor20189,966,434Manufacturing method of semiconductor device20189,966,266Apparatus for semiconductor wafer treatment and semiconductor wafer treatment20189,947,588Method for manufacturing fins20189,929,264'Field-effect transistor and method of making the same'20189,859,164'Method for manufacturing fins'20189,748,147'Method of fabricating epitaxial layer'20179,748,386'Epitaxial structure of semiconductor device and manufacturing method thereof'20179,722,030'Semiconductor device and manufacturing method thereof'20179,716,165'Field-effect transistor and method of making the same'20179,673,324'MOS device with epitaxial structure associated with source/drain region and method of forming the same'20179,633,904'Method for manufacturing semiconductor device with epitaxial structure'20179,570,578'Gate and gate forming process'20179,530,886'Semiconductor device with epitaxial structure and manufacturing method thereof'20169,466,480'Cleaning process for oxide'20169,397,214'Semiconductor device'20167,435,658'Method of manufacturing metal-oxide-semiconductor transistor'20087,306,681'Method of cleaning a semiconductor substrate'20077,071,046'Method of manufacturing a MOS transistor'20067,060,547'Method for forming a junction region of a semiconductor device'20066,991,991'Method for preventing to form a spacer undercut in SEG pre-clean process'20066,943,085'Method of manufacturing metal-oxide-semiconductor transistor'20056,893,909'Method of manufacturing metal-oxide-semiconductor transistor'20056,861,104'Method of enhancing adhesion strength of BSG film to silicon nitride film'20056,827,835'Method for electroplated metal annealing process'20046,815,770'MOS transistor having reduced source/drain extension sheet resistance'20046,670,715'Bilayer silicon carbide based barrier'20036,653,204'Method of forming a shallow trench isolation structure'20036,596,652'Method of fabricating low dielectric constant film'20036,521,545'Method of a surface treatment on a fluorinated silicate glass film'20036,429,152'Method of forming a thin film on a semiconductor wafer'20026,406,978'Method of removing silicon carbide'20026,387,813'Method for stripping a low dielectric film with high carbon content'20026,365,527'Method for depositing silicon carbide in semiconductor devices'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2018Patents assigned to UNITED MICROELECTRONICS CORP (34)· patent assignee history
2002–2018Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 34 | 2002–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 34 | 2002–2018 |