Inventor
Beth A. Ward
Inventor
Essex Junction, VT, US
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices60%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
PatentTitleYear
8,709,887'Method for fabricating a nitrided silicon-oxide gate dielectric'20147,714,366'CMOS transistor with a polysilicon gate electrode having varying grain size'20107,291,568'Method for fabricating a nitrided silicon-oxide gate dielectric'20077,109,559'Nitrided ultra thin gate dielectrics'20066,909,157'Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors'20056,893,948'Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size'20056,893,979'Method for improved plasma nitridation of ultra thin gate dielectrics'20056,706,644'Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors'20046,670,263'Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2014Patents assigned to IBM (9)· patent assignee history
2003–2014Based in Essex Junction, VT, US· patent location history
2014Patents assigned to BURNHAM JAY S (1)· patent assignee history
2014Patents assigned to NAKOS JAMES S (1)· patent assignee history
2014Patents assigned to QUINLIVAN JAMES J (1)· patent assignee history
2014Patents assigned to ROQUE JR BERNIE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 9 | 2003–2014 |
| BURNHAM JAY S | 1 | 2014 |
| NAKOS JAMES S | 1 | 2014 |
| QUINLIVAN JAMES J | 1 | 2014 |
| ROQUE JR BERNIE | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Essex Junction, VT, US | 9 | 2003–2014 |