Inventor
Mikiya Ichimura
Inventor
Ichinomiya, JP
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01LSemiconductor devices17%
C30BSingle-crystal growth16%
C23CCoating metallic material6%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
C01BNon-metallic elements1%
C09KMaterials for miscellaneous applications, not provided for elsewhere1%
PatentTitleYear
11,088,299Group 13 element nitride layer, free-standing substrate and functional element202111,011,678Group 13 element nitride layer, free-standing substrate and functional element202110,804,432Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same202010,770,552Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements202010,734,548Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same202010,629,688Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements202010,580,646Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements202010,418,239Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements201910,410,859Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements201910,347,755Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate201910,332,975Epitaxial substrate for semiconductor device and method for manufacturing same201910,332,958Supporting substrate for composite substrate and composite substrate201910,128,406GaN template substrate20189,882,042'Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate'20189,627,568'Photovoltaic element'20179,382,641'Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device'20169,284,911'Engine combustion chamber structure, and inner wall structure of through channel'20169,090,993'Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate'20159,024,325'Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor element'20158,969,880'Epitaxial substrate and method for manufacturing epitaxial substrate'20158,946,723'Epitaxial substrate and method for manufacturing epitaxial substrate'20158,860,084'Epitaxial substrate for semiconductor device, semiconductor device, method of manufacturing epitaxial substrate for semiconductor device, and method of manufacturing semiconductor device'20148,853,735'Epitaxial substrate for semiconductor device and semiconductor device'20148,853,829'Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device'20148,853,828'Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device'20148,648,351'Epitaxial substrate and method for manufacturing epitaxial substrate'20148,598,626'Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure'20138,506,705'Method for manufacturing nitride single crystal'20138,471,265'Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereof'20138,415,690'Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element'20138,410,552'Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device'20138,378,386'Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device'20138,025,728'Method for manufacturing single crystal of nitride'20117,988,784'Method for manufacturing III metal nitride single crystal'20117,670,430'Method of recovering sodium metal from flux'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Patents assigned to NGK INSULATORS LTD (35)· patent assignee history
2010–2017Based in Nagoya, JP· patent location history
2011–2021Based in Ichinomiya, JP· patent location history
2013–2016Patents assigned to ICHIMURA MIKIYA (9)· patent assignee history
2013–2016Patents assigned to MIYOSHI MAKOTO (8)· patent assignee history
2013–2016Patents assigned to TANAKA MITSUHIRO (8)· patent assignee history
2013–2015Patents assigned to SUMIYA SHIGEAKI (7)· patent assignee history
2016Based in Aichi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NGK INSULATORS LTD | 35 | 2010–2021 |
| ICHIMURA MIKIYAself | 9 | 2013–2016 |
| MIYOSHI MAKOTO | 8 | 2013–2016 |
| TANAKA MITSUHIRO | 8 | 2013–2016 |
| SUMIYA SHIGEAKI | 7 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ichinomiya, JP | 26 | 2011–2021 |
| Nagoya, JP | 8 | 2010–2017 |
| Aichi, JP | 1 | 2016 |