Inventor
Sungsoo Yi
Inventor
Sunnyvale, CA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers28%
H01LSemiconductor devices17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
B82YSpecific uses or applications of nanostructures9%
H10DInorganic electric semiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,811,460Micrometer scale light emitting diode displays on patterned templates and substrates202010,312,404Semiconductor light emitting device growing active layer on textured surface201910,026,866III-nitride nanowire LED with strain modified surface active region and method of making thereof20189,911,896'Semiconductor light emitting device growing active layer on textured surface'20189,806,111'Nanostructure optoelectronic device with independently controllable junctions'20179,761,757'III-nitride nanowire LED with strain modified surface active region and method of making thereof'20179,570,651'Coalesced nanowire structures with interstitial voids and method for manufacturing the same'20179,281,442'III-nitride nanowire LED with strain modified surface active region and method of making thereof'20169,035,278'Coalesced nanowire structures with interstitial voids and method for manufacturing the same'20159,012,250'Controlling pit formation in a III-nitride device'20158,659,037'Nanostructure optoelectronic device with independently controllable junctions'20148,476,637'Nanostructure optoelectronic device having sidewall electrical contact'20138,431,817'Multi-junction solar cell having sidewall bi-layer electrical interconnect'20138,183,577'Controlling pit formation in a III-nitride device'20128,105,852'Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate'20127,663,148'III-nitride light emitting device with reduced strain light emitting layer'20107,629,532'Solar cell having active region with nanostructures having energy wells'20097,357,018'Method for performing a measurement inside a specimen using an insertable nanoscale FET probe'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2020Based in Sunnyvale, CA, US· patent location history
2009–2017Patents assigned to SUNDIODE INC (5)· patent assignee history
2012–2018Patents assigned to YI SUNGSOO (7)· patent assignee history
2012–2018Patents assigned to GARDNER NATHAN F (4)· patent assignee history
2013–2014Patents assigned to KIM JAMES C (3)· patent assignee history
2015–2018Patents assigned to GLO AB (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YI SUNGSOOself | 7 | 2012–2018 |
| GLO AB | 5 | 2015–2018 |
| SUNDIODE INC | 5 | 2009–2017 |
| GARDNER NATHAN F | 4 | 2012–2018 |
| KIM JAMES C | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 18 | 2008–2020 |