Inventor
CHIH-CHING WANG
Inventor
TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices27%
B82YSpecific uses or applications of nanostructures21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G09GArrangements or circuits for control of indicating devices using static means to present variable information4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
12,581,691Methods of manufacturing semiconductor devices and semiconductor devices202612,568,640Multi-gate devices with multi-layer inner spacers and fabrication methods thereof202612,396,240Source/drain silicide for multigate device performance and method of fabricating thereof202512,349,393Semiconductor device transistor having multiple channels with different widths and materials202512,349,380Gate all around transistor device and fabrication methods thereof202512,317,526Multi-gate devices and fabricating the same with etch rate modulation202512,300,749Source/drain features with improved strain properties202512,300,754Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof202512,283,215Display device and driving method thereof202512,237,414Source/drain features with improved strain properties202512,230,712Dielectric fin structure202512,218,214Source/drain silicide for multigate device performance and method of fabricating thereof202512,125,848Semiconductor device structure incorporating air gap202412,112,669Display device and driving circuit structure202412,073,764Circuit driving substrate, display panel, and display driving method202412,068,372Semiconductor device structure integrating air gaps and methods of forming the same202411,949,001Multi-gate devices and fabricating the same with etch rate modulation202411,916,110Semiconductor device having nanosheet transistor and methods of fabrication thereof202411,908,919Multi-gate devices with multi-layer inner spacers and fabrication methods thereof202411,735,665Dielectric fin structure202311,626,400Semiconductor device structure incorporating air gap202311,616,151Channel configuration for improving multigate device performance and method of fabrication thereof202311,600,699Semiconductor device structure integrating air gaps and methods of forming the same202311,557,659Gate all around transistor device and fabrication methods thereof202311,508,807Semiconductor device having nanosheet transistor and methods of fabrication thereof202211,404,576Dielectric fin structure202211,387,322Semiconductor device having nanosheet transistor and methods of fabrication thereof202211,282,943Multi-gate devices and fabricating the same with etch rate modulation202211,201,243Nanowire stack GAA device and methods for producing the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (26)· patent assignee history
2021–2026Based in TW· patent location history
2024–2025Patents assigned to E INK HOLDINGS INC (3)· patent assignee history
2025Patents assigned to TAIWAN SEMICONDCUTOR MFG CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 26 | 2021–2026 |
| E INK HOLDINGS INC | 3 | 2024–2025 |
| TAIWAN SEMICONDCUTOR MFG CO LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 29 | 2021–2026 |