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Inventor

Chul-Min Jung

Inventor
Seoul, KR

Overview

24→
Patents
1995–2021
Patent span
Physics
Primary field (CPC G)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores35%
H03KPulse technique14%
G05FSystems for regulating electric or magnetic variables7%
H10BElectronic memory devices7%
F42BExplosive charges, e.g. for blasting, fireworks, ammunition5%
H10DInorganic electric semiconductor devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
Y02TClimate change mitigation technologies related to transportation5%
B01DSeparation2%
B63BShips or other waterborne vessels2%
PatentTitleYear
11,035,273After treatment system and after treatment method for lean-burn engine20219,227,710'Cylindrical underwater vehicle with vertical end plate attached to partially movable rudder'20168,881,667'Cavitation device of underwater moving body and underwater moving body having the same'20147,606,088'Sense amplifier circuit'20097,433,250'Sense amplifier circuit'20087,282,407'Semiconductor memory device and method of manufacturing for preventing bit line oxidation'20077,274,609'High speed redundant data sensing method and apparatus'20077,268,614'Low supply voltage bias circuit, semiconductor device, wafer and system including same, and method of generating a bias reference'20077,133,321'Sense amplifier circuit'20067,071,770'Low supply voltage bias circuit, semiconductor device, wafer and system including same, and method of generating a bias reference'20066,985,391'High speed redundant data sensing method and apparatus'20066,275,069'Self-resetting logic circuits and method of operation thereof'20016,177,320'Method for forming a self aligned contact in a semiconductor device'20016,165,840'Method for fabricating a DRAM cell capacitor including forming first multilayer insulator, forming conductive plug, forming second insulator, and etching second and first insulators to form the storage node'20006,064,609'Semiconductor memory device with true/complement redundancy scheme'20006,023,177'Semiconductor memory device for providing burst mode control signal, device comprising plural serial transition registers'20006,011,421'Scalable level shifter for use in semiconductor memory device'20005,777,931'Synchronized redundancy decoding systems and methods for integrated circuit memory devices'19985,699,304'Dynamic level converter of a semiconductor memory device'19975,680,062'Gunn transceiver logic input circuit for use in a semiconductor memory device'19975,592,121'Internal power-supply voltage supplier of semiconductor integrated circuit'19975,477,497'Semiconductor memory device'19955,467,313'Level shifter and data output buffer having same'19955,384,736'Data output circuit of a semiconductor memory device'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2007Patents assigned to SAMSUNG ELECTRONICS CO LTD (14)· patent assignee history
1995–2001Based in Seoul, KR· patent location history
2000–2001Based in Kyungki-do, KR· patent location history
2006–2009Patents assigned to MICRON TECHNOLOGY INC (7)· patent assignee history
2006–2009Based in Boise, ID, US· patent location history
2014–2016Patents assigned to AGENCY DEFENSE DEV (2)· patent assignee history
2014Patents assigned to JUNG CHUL MIN (1)· patent assignee history
2014–2016Based in Busan, KR· patent location history
2021Patents assigned to HYUNDAI MOTOR CO LTD (1)· patent assignee history
2021Based in Gyeonggi-do, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD141995–2007
MICRON TECHNOLOGY INC72006–2009
AGENCY DEFENSE DEV22014–2016
HYUNDAI MOTOR CO LTD12021
JUNG CHUL MINself12014
Locations
LocationPatentsSpan
Seoul, KR111995–2001
Boise, ID, US72006–2009
Busan, KR22014–2016
Kyungki-do, KR22000–2001
Gyeonggi-do, KR12021