LexDanaLexDanabeta
Inventor

Yuji Takeuchi

Inventor
Yokohama, JP

Overview

82→
Patents
1976–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 82 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices32%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
G11CStatic stores12%
G06FElectric digital data processing3%
F16GBelts, cables, or ropes, predominantly used for driving purposes2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
A63FCard, board, or roulette games1%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form1%
G01CMeasuring distances, levels or bearings1%
PatentTitleYear
11,046,864Copolyester resin and polyester film for covering metal plates and laminated polyester film comprising same made into film202111,027,623Information processing server and information processing system202110,824,668Information processing server, client, and information processing system202010,586,107Information processing server, client, and information processing system202010,508,927Navigation server, navigation client and navigation system20199,433,857'Input control device, input control method, and input control program'20169,059,300'Nonvolatile semiconductor memory device having element isolating region of trench type'20158,884,924'Information processing apparatus, information processing method, information recording medium, and program'20148,737,134'Nonvolatile semiconductor storage device'20148,421,143'Nonvolatile semiconductor memory device having element isolating region of trench type'20138,422,301'Nonvolatile semiconductor memory device and operating method thereof'20138,405,139'Nonvolatile semiconductor memory device having element isolating region of trench type'20138,350,309'Nonvolatile semiconductor memory'20138,344,442'Nonvolatile semiconductor memory having a gate electrode with a round-arched shape'20138,316,063'Data-driven database processor'20128,167,335'Fender liner and process for producing the same'20128,134,199'Nonvolatile semiconductor memory'20128,084,802'Nonvolatile semiconductor memory'20117,939,406'Nonvolatile semiconductor memory device having element isolating region of trench type'20117,893,477'Nonvolatile semiconductor memory'20117,838,404'Method of fabricating a nonvolatile semiconductor memory'20107,612,401'Non-volatile memory cell'20097,595,522'Nonvolatile semiconductor memory'20097,573,092'Nonvolatile semiconductor memory device having element isolating region of trench type'20097,541,233'Semiconductor device and method of manufacturing the same'20097,538,380'Nonvolatile semiconductor memory device having element isolating region of trench type'20097,504,294'Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)'20097,498,630'Nonvolatile semiconductor memory'20097,449,745'Nonvolatile semiconductor memory device having element isolating region of trench type'20087,442,985'Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same'20087,425,739'Nonvolatile semiconductor memory'20087,417,281'Semiconductor device with a selection gate and a peripheral gate'20087,371,654'Manufacturing method of semiconductor device with filling insulating film into trench'20087,352,027'Nonvolatile semiconductor memory device having element isolating region of trench type'20087,348,627'Nonvolatile semiconductor memory device having element isolating region of trench type'20087,332,762'Nonvolatile semiconductor memory'20087,245,534'Nonvolatile semiconductor memory'20077,141,474'Fabrication method of a nonvolatile semiconductor memory'20067,122,432'Non-volatile semiconductor memory device and manufacturing method thereof'20067,081,386'Semiconductor device and method of manufactuing the same'20067,049,653'Nonvolatile semiconductor memory device having element isolating region of trench type'20067,045,423'Non-volatile semiconductor memory device with multi-layer gate structure'20067,026,241'Superconductor device and method of manufacturing the same'20066,995,425'Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same'20066,974,979'Nonvolatile semiconductor memory'20056,969,660'Method of manufacturing a semiconductor device with trench isolation between two regions having different gate insulating films'20056,958,938'Data writing method for semiconductor memory device and semiconductor memory device'20056,943,453'Superconductor device and method of manufacturing the same'20056,927,998'Nonvolatile semiconductor memory device capable of reducing threshold voltage variations of memory cells due to capacitance coupling'20056,927,449'Nonvolatile semiconductor memory device having element isolating region of trench type'20056,921,960'Capacitor element with an opening portion formed in a peripheral circuit'20056,894,341'Semiconductor device and manufacturing method'20056,870,773'Data writing method for semiconductor memory device and semiconductor memory device'20056,853,029'Non-volatile semiconductor memory device with multi-layer gate structure'20056,845,042'Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems'20056,844,590'Semiconductor device with trench isolation between two regions having different gate insulating films'20056,835,978'Nonvolatile semiconductor memory device having element isolating region of trench type'20046,818,508'Non-volatile semiconductor memory device and manufacturing method thereof'20046,809,967'Data writing method for semiconductor memory device and semiconductor memory device'20046,806,525'Semiconductor device and operation method thereof'20046,798,038'Manufacturing method of semiconductor device with filling insulating film into trench'20046,784,041'Semiconductor device and method of manufacturing the same'20046,720,612'Semiconductor device'20046,611,010'Semiconductor device'20036,596,578'Semiconductor device and manufacturing method thereof'20036,590,255'Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same'20036,555,427'Non-volatile semiconductor memory device and manufacturing method thereof'20036,534,867'Semiconductor device, semiconductor element and method for producing same'20036,531,357'Method of manufacturing a semiconductor device'20036,512,253'Nonvolatile semiconductor memory'20036,495,896'Semiconductor integrated circuit device with high and low voltage wells'20026,396,086'Semiconductor device and semiconductor integrated circuit having a conductive film on element region'20026,388,341'Semiconductor device'20026,353,242'Nonvolatile semiconductor memory'20026,160,297'Semiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit lines'20006,157,056'Semiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arrays'20006,068,916'Tension member for belt, method of producing the same and belt including the same'20006,057,580'Semiconductor memory device having shallow trench isolation structure'20005,889,304'Nonvolatile semiconductor memory device'19995,876,297'Tension member for a power transmission belt having a braiding pitch to diameter ratio within a specific range to increase the flex fatigue resistance of the belt'19995,735,763'Tension member for belt and belt including the same'19983,974,617'Double shell tank construction method'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–2015Based in Yokohama, JP· patent location history
1998–2000Patents assigned to BANDO CHEMICAL IND (3)· patent assignee history
1998–2000Based in Kobe, JP· patent location history
1999–2015Patents assigned to TOSHIBA KK (69)· patent assignee history
1999–2013Based in Kawasaki, JP· patent location history
2004–2016Based in Kanagawa, JP· patent location history
2005–2021Based in Tokyo, JP· patent location history
2011–2016Patents assigned to TAKEUCHI YUJI (12)· patent assignee history
2011–2013Patents assigned to TAKEUCHI KEN (3)· patent assignee history
2019–2021Patents assigned to HONDA MOTOR CO LTD (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK691999–2015
TAKEUCHI YUJIself122011–2016
HONDA MOTOR CO LTD42019–2021
BANDO CHEMICAL IND31998–2000
TAKEUCHI KEN32011–2013
Locations
LocationPatentsSpan
Yokohama, JP471976–2015
Kawasaki, JP191999–2013
Tokyo, JP62005–2021
Kanagawa, JP42004–2016
Kobe, JP31998–2000