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Inventor

Taizo Hoshino

Inventor
Tokyo, JP

Overview

4→
Patents
2003–2017
Patent span
Chemistry
Primary field (CPC C)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
C23CCoating metallic material17%
H01LSemiconductor devices17%
PatentTitleYear
9,691,607'Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same'20178,901,570'Epitaxial silicon carbide single crystal substrate and process for producing the same'20148,044,408'SiC single-crystal substrate and method of producing SiC single-crystal substrate'20116,548,886'Silicon semiconductor wafer and method for producing the same'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003Based in Yamaguchi, JP· patent location history
2011–2017Based in Tokyo, JP· patent location history
2014–2017Patents assigned to AIGO TAKASHI (2)· patent assignee history
2014–2017Patents assigned to FUJIMOTO TATSUO (2)· patent assignee history
2014–2017Patents assigned to HOSHINO TAIZO (2)· patent assignee history
2014–2017Patents assigned to KATSUNO MASAKAZU (2)· patent assignee history
2014–2017Patents assigned to NAKABAYASHI MASASHI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AIGO TAKASHI22014–2017
FUJIMOTO TATSUO22014–2017
HOSHINO TAIZOself22014–2017
KATSUNO MASAKAZU22014–2017
NAKABAYASHI MASASHI22014–2017
Locations
LocationPatentsSpan
Tokyo, JP32011–2017
Yamaguchi, JP12003