Inventor
Cheng-Tsung Ni
Inventor
Hsinchu, TW
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10BElectronic memory devices7%
A61KPreparations for medical, dental or toiletry purposes3%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations3%
C07CAcyclic or carbocyclic compounds3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
6,888,197'Power metal oxide semiconductor field effect transistor layout'20056,821,913'Method for forming dual oxide layers at bottom of trench'20046,784,115'Method of simultaneously implementing differential gate oxide thickness using fluorine bearing impurities'20046,734,212'Methods and compositions for treating or preventing bacterial infection'20046,660,592'Fabricating a DMOS transistor'20036,657,263'MOS transistors having dual gates and self-aligned interconnect contact windows'20036,563,166'Flash cell device'20036,284,578'MOS transistors having dual gates and self-aligned interconnect contact windows'20016,228,729'MOS transistors having raised source and drain and interconnects'20016,150,244'Method for fabricating MOS transistor having raised source and drain'20006,127,699'Method for fabricating MOSFET having increased effective gate length'20006,008,106'Micro-trench oxidation by using rough oxide mask for field isolation'19995,972,754'Method for fabricating MOSFET having increased effective gate length'19995,804,493'Method for preventing substrate damage during semiconductor fabrication'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2005Patents assigned to MOSEL VITELIC INC (13)· patent assignee history
1998–2005Based in Hsinchu, TW· patent location history
2003Based in Hsinchu County, TW· patent location history
2004Patents assigned to NANJING UNIVERSITY OF TECHNOLOGY (1)· patent assignee history
2004Patents assigned to SHANGHAI EAST BEST BIOPHARMACE (1)· patent assignee history
2004Based in Jiangsu Province, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOSEL VITELIC INC | 13 | 1998–2005 |
| NANJING UNIVERSITY OF TECHNOLOGY | 1 | 2004 |
| SHANGHAI EAST BEST BIOPHARMACE | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 12 | 1998–2005 |
| Jiangsu Province, CN | 1 | 2004 |
| Hsinchu County, TW | 1 | 2003 |