Inventor
Kazutaka Kuriki
Inventor
Kanagawa, JP
Overview
Patents· 70 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
Y02Eprimary
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution16%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy15%
H01GCapacitors13%
Y02PClimate change mitigation technologies in the production or processing of goods10%
H10DInorganic electric semiconductor devices9%
Y02TClimate change mitigation technologies related to transportation7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H01LSemiconductor devices5%
Y10TTechnical subjects covered by former us classification5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
11,056,678Negative electrode for power storage device, method for forming the same, and power storage device202111,056,516Power storage element, manufacturing method thereof, and power storage device202110,903,206Semiconductor device and electronic device202110,862,177Semiconductor device and electronic device202010,741,679Semiconductor device and method for manufactring semiconductor device202010,658,661Power storage device and method for manufacturing electrode202010,529,990Electrode, power storage device, and electronic device202010,483,044Material for electrode of power storage device, power storage device, and electrical appliance201910,461,103Power storage element, manufacturing method thereof, and power storage device201910,388,467Electrode for power storage device, power storage device, and manufacturing method of electrode for power storage device201910,354,810Electrode, power storage device, electronic device, and method for fabricating electrode201910,290,908Semiconductor device and electronic device201910,263,243Negative electrode for power storage device, method for forming the same, and power storage device201910,236,502Power storage device and method for manufacturing the same201910,204,898Semiconductor device and electronic device201910,141,120Power storage system and manufacturing method thereof and secondary battery and capacitor201810,128,498Power storage device201810,072,331Method for forming silicon film and method for manufacturing power storage device20189,960,225Manufacturing method of power storage device20189,947,777Semiconductor device and method for manufacturing semiconductor device20189,911,973'Power storage device'20189,899,660'Negative electrode for power storage device, method for forming the same, and power storage device'20189,852,850Electrode, power storage device, electronic device, and vehicle20179,837,300Method for manufacturing SOI substrate20179,806,334'Power storage device electrode, method for forming the same, power storage device, and electrical device'20179,799,461'Power storage device and method for manufacturing electrode'20179,754,728'Material for electrode of power storage device, power storage device, and electrical appliance'20179,748,287'Power storage element, manufacturing method thereof, and power storage device'20179,735,419'Secondary battery and method for forming electrode of secondary battery'20179,735,430'Electrode, power storage device, and electronic device'20179,685,277'Electrode'20179,685,653'Negative electrode for power storage device, method for forming the same, and power storage device'20179,685,275'Power storage device and method for manufacturing the same'20179,660,298'Power storage element, manufacturing method thereof, and power storage device'20179,646,771'Power storage element including positive electrode and negative electrode in the same plane over substrate and power storage device'20179,577,268'Power storage device and method for manufacturing the same'20179,543,577'Active material, electrode including the active material and manufacturing method thereof, and secondary battery'20179,384,904'Negative electrode for power storage device, method for forming the same, and power storage device'20169,362,556'Power storage device'20169,350,044'Lithium secondary battery and manufacturing method thereof'20169,281,134'Power storage device and method for manufacturing the same'20169,196,906'Power storage device and method for manufacturing the same'20159,142,358'Power storage device and electric device'20159,129,754'Electrode for power storage device and power storage device'20159,070,950'Power storage element, manufacturing method thereof, and power storage device'20159,011,702'Method for manufacturing electrode for power storage device and method for manufacturing power storage device'20158,956,934'Thin film transistor and method for manufacturing the same'20158,952,490'Redox capacitor and manufacturing method thereof'20158,940,610'Electrode for energy storage device and method for manufacturing the same'20158,846,496'Manufacturing method of single crystal semiconductor film and manufacturing method of electrode'20148,845,764'Power storage device comprising solid electrolyte layer over active material and second electrolyte and method of manufacturing the same'20148,835,048'Power storage device'20148,822,088'Power storage device'20148,755,169'Electrochemical capacitor'20148,748,039'Energy storage device and manufacturing method thereof'20148,658,313'Method for manufacturing electrode, and method for manufacturing power storage device and power generation and storage device having the electrode'20148,623,550'Secondary battery and method for manufacturing electrode of the same'20148,486,777'Method for manufacturing microcrystalline semiconductor and thin film transistor'20138,476,638'Plasma CVD apparatus'20138,404,001'Method for manufacturing positive electrode and power storage device'20138,390,067'Substrate for manufacturing semiconductor device and manufacturing method thereof'20138,344,378'Thin film transistor and method for manufacturing the same'20138,273,611'Method for manufacturing semiconductor substrate'20128,252,669'Method for manufacturing microcrystalline semiconductor film by plasma CVD apparatus'20128,236,668'Method for manufacturing SOI substrate'20128,207,045'Method for manufacturing SOI substrate'20128,114,760'Method for manufacturing microcrystalline semiconductor and thin film transistor'20127,875,532'Substrate for manufacturing semiconductor device and manufacturing method thereof'20117,763,502'Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device'20107,696,058'Method for manufacturing SOI substrate'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (70)· patent assignee history
2010–2021Based in Kanagawa, JP· patent location history
2010–2018Based in Ebina, JP· patent location history
2012–2020Patents assigned to KURIKI KAZUTAKA (34)· patent assignee history
2012–2018Patents assigned to YAMAZAKI SHUNPEI (7)· patent assignee history
2012–2017Patents assigned to ICHIJO MITSUHIRO (6)· patent assignee history
2014–2020Patents assigned to OGINO KIYOFUMI (7)· patent assignee history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 70 | 2010–2021 |
| KURIKI KAZUTAKAself | 34 | 2012–2020 |
| OGINO KIYOFUMI | 7 | 2014–2020 |
| YAMAZAKI SHUNPEI | 7 | 2012–2018 |
| ICHIJO MITSUHIRO | 6 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 60 | 2010–2021 |
| Ebina, JP | 8 | 2010–2018 |
| Yokohama-shi, Kanagawa, JP | 2 | 2021 |