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Inventor

J. S. Shiao

Inventor
Hsinchu, TW

Overview

3→
Patents
2001–2002
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices50%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1050%
PatentTitleYear
6,365,485'DRAM technology of buried plate formation of bottle-shaped deep trench'20026,312,983'Etching method for reducing bit line coupling in a DRAM'20016,187,650'Method for improving global planarization uniformity of a silicon nitride layer used in the formation of trenches by using a sandwich stop layer'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2002Patents assigned to MOSEL VITELIC INC (2)· patent assignee history
2001–2002Patents assigned to PROMOS TECH INC (2)· patent assignee history
2001Patents assigned to INFINEON TECH INC (1)· patent assignee history
2001Patents assigned to PROMOS TECHNOLOGIES INC (1)· patent assignee history
2001–2002Based in Hsinchu, TW· patent location history
2002Patents assigned to SIEMENS AG (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MOSEL VITELIC INC22001–2002
PROMOS TECH INC22001–2002
INFINEON TECH INC12001
PROMOS TECHNOLOGIES INC12001
SIEMENS AG12002
Locations
LocationPatentsSpan
Hsinchu, TW32001–2002