Inventor
Hidenori Miyoshi
Inventor
Nirasaki, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
C23CCoating metallic material17%
H10DInorganic electric semiconductor devices8%
H01LSemiconductor devices6%
C23FNon-mechanical removal of metallic material from surface3%
H01JElectric discharge tubes or discharge lamps3%
H05HPlasma technique3%
H10KOrganic electric solid-state devices3%
B08BCleaning in general2%
PatentTitleYear
10,825,688Method for etching copper layer20209,293,417'Method for forming barrier film on wiring line'20168,999,102'Substrate processing apparatus'20158,865,590'Film forming method, pretreatment device, and processing system'20148,785,311'Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor'20148,765,221'Film forming method and film forming apparatus'20148,709,541'Method for forming a film'20148,653,665'Barrier layer, film forming method, and processing system'20148,610,353'Plasma generating apparatus, plasma processing apparatus and plasma processing method'20138,551,565'Film forming method and film forming apparatus'20138,394,231'Plasma process device and plasma process method'20138,354,337'Metal oxide film formation method and apparatus'20138,310,054'Semiconductor device manufacturing method and target substrate processing system'20128,138,095'Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium'20128,114,786'Heat treatment method, heat treatment apparatus and substrate processing apparatus'20128,029,856'Film formation method and apparatus'20118,003,535'Semiconductor device manufacturing method and target substrate processing system'20117,772,130'Insulation film forming method, insulation film forming system, and semiconductor device manufacturing method'20107,709,394'Substrate processing method and apparatus fabrication process of a semiconductor device'20107,556,711'Semiconductor device manufacturing apparatus and operating method thereof'20097,279,434'Material and method for forming low-dielectric-constant film'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to TOKYO ELECTRON LTD (21)· patent assignee history
2007–2016Based in Nirasaki, JP· patent location history
2012–2016Patents assigned to MIYOSHI HIDENORI (13)· patent assignee history
2013–2014Patents assigned to ITOH HITOSHI (5)· patent assignee history
2013–2014Patents assigned to MATSUMOTO KENJI (3)· patent assignee history
2013–2014Patents assigned to SATO HIROSHI (3)· patent assignee history
2013Based in Yamanashi, JP· patent location history
2020Based in Miyagi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 21 | 2007–2020 |
| MIYOSHI HIDENORIself | 13 | 2012–2016 |
| ITOH HITOSHI | 5 | 2013–2014 |
| MATSUMOTO KENJI | 3 | 2013–2014 |
| SATO HIROSHI | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nirasaki, JP | 18 | 2007–2016 |
| Yamanashi, JP | 2 | 2013 |
| Miyagi, JP | 1 | 2020 |