Inventor
Pradeep Rajagopal
Inventor
Raleigh, NC, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1038%
C30BSingle-crystal growth19%
H01LSemiconductor devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,096,701Gallium nitride materials and methods associated with the same20188,748,298'Gallium nitride materials and methods associated with the same'20148,368,117'III-nitride materials including low dislocation densities and methods associated with the same'20137,994,540'Gallium nitride material transistors and methods associated with the same'20117,791,106'Gallium nitride material structures including substrates and methods associated with the same'20107,745,848'Gallium nitride material devices and thermal designs thereof'20107,687,827'III-nitride materials including low dislocation densities and methods associated with the same'20107,569,871'Gallium nitride material transistors and methods associated with the same'20097,378,684'Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates'20087,365,374'Gallium nitride material structures including substrates and methods associated with the same'20087,352,015'Gallium nitride materials and methods associated with the same'20087,352,016'Gallium nitride material transistors and methods associated with the same'20087,339,205'Gallium nitride materials and methods associated with the same'20087,247,889'III-nitride material structures including silicon substrates'20077,135,720'Gallium nitride material transistors and methods associated with the same'20066,462,355'Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates'20026,376,339'PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY'20026,177,688'Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to UNIV NORTH CAROLINA STATE (4)· patent assignee history
2001–2018Based in Raleigh, NC, US· patent location history
2006–2010Patents assigned to NITRONEX CORP (10)· patent assignee history
2011–2014Patents assigned to INT RECTIFIER CORP (3)· patent assignee history
2013–2018Patents assigned to PINER EDWIN L (3)· patent assignee history
2013–2018Patents assigned to RAJAGOPAL PRADEEP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NITRONEX CORP | 10 | 2006–2010 |
| UNIV NORTH CAROLINA STATE | 4 | 2001–2008 |
| INT RECTIFIER CORP | 3 | 2011–2014 |
| PINER EDWIN L | 3 | 2013–2018 |
| RAJAGOPAL PRADEEPself | 3 | 2013–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Raleigh, NC, US | 18 | 2001–2018 |