Inventor
SUNG-TAEG KANG
Inventor
US
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores19%
H01LSemiconductor devices19%
H10BElectronic memory devices19%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
12,542,187Apparatus and method to improve read window budget in a three dimensional NAND memory202612,362,002Staggered read recovery for improved read window budget in a three dimensional (3D) NAND memory array202512,029,041Method of forming high-voltage transistor with thin gate poly202411,690,227Method of forming high-voltage transistor with thin gate poly202311,587,874Resistance reduction for word lines in memory arrays2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2024Patents assigned to CYPRESS SEMICONDUCTOR CORP (2)· patent assignee history
2023Patents assigned to INTEL CORP (1)· patent assignee history
2023–2026Based in US· patent location history
2024Patents assigned to Infineon Technologies LLC (1)· patent assignee history
2025–2026Patents assigned to Intel NDTM US LLC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CYPRESS SEMICONDUCTOR CORP | 2 | 2023–2024 |
| Intel NDTM US LLC | 2 | 2025–2026 |
| INTEL CORP | 1 | 2023 |
| Infineon Technologies LLC | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 5 | 2023–2026 |